AO3423
Symbol Min Typ Max Units
BV
DSS
-20 V
V
DS
=-20V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage
-0.5 -0.85 -1.2 V
I
D(ON)
-17 A
76 92
T
J
=125°C 99 119
94 118 mΩ
128 166 mΩ
g
FS
6.8 S
V
SD
-0.76 -1 V
I
S
-1.5 A
C
iss
250 325 400 pF
C
oss
40 63 85 pF
C
rss
22 37 52 pF
R
g
11.2 17 Ω
Q
g
3.2
4.5 nC
Q
gs
0.6
nC
Q
gd
0.9
nC
t
D(on)
11
ns
Gate Drain Charge
Turn-On DelayTime
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2A
Gate Source Charge
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
mΩ
Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
I
DSS
µA
V
DS
=V
GS
, I
D
=-250µΑ
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Drain-Source Breakdown Voltage
On state drain current
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-2A
V
GS
=-2.5V, I
D
=-1A
I
D
=-250µA, V
GS
=0V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Diode Forward Voltage
Forward Transconductance
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-2A
V
GS
=-4.5V, I
D
=-2A
r
t
D(off)
22
ns
t
f
8
ns
t
rr
6.1
ns
Q
rr
1.4 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=-2A, dI/dt=100A/µs
Turn-Off DelayTime
I
F
=-2A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time
GS
DS
L
R
GEN
=3Ω
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
Rev 5: Nov 2011 www.aosmd.com Page 2 of 5
