SIA439EDJ-T1-GE3 Datasheet SIA439EDJ-T1-GE3 | P1-P3

SiA439EDJ

www.vishay.com

Vishay Siliconix

S13-0108-Rev. A, 21-Jan-13

1

Document Number: 62819

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 20 V (D-S) MOSFET

FEATURES

•TrenchFET

®

Power MOSFET

• Thermally Enhanced PowerPAK

®

SC-70 Package

- Small Footprint Area

- Low On-Resistance

•100 % R

g

and UIS Tested

• Typical ESD Protection: 4000 V (HBM)

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Portable Devices such as Smart Phones,

Tablet PCs and Mobile Computing

- Battery Switch

- Load Switch

- Power Management

Notes

a. T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() (Max.) I

D

(A)

a

Q

g

(Typ.)

- 20

0.0165 at V

GS

= - 4.5 V - 28

26.7 nC

0.0180 at V

GS

= - 3.7 V - 27

0.0235 at V

GS

= - 2.5 V - 23

0.0420 at V

GS

= - 1.8 V - 6

PowerPAK SC-70-6L-Single

6

5

4

1

2

3

D

G

S

2.05 mm

Ordering Information:

SiA439EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

S

D

G

Marking Code

X X X

B Z X

Lot Traceability

and Date code

Part # code

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

- 20

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 28

A

T

C

= 70 °C - 22

T

A

= 25 °C - 12

b, c

T

A

= 70 °C - 9.5

b, c

Pulsed Drain Current (t = 300 μs) I

DM

- 60

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 16

T

A

= 25 °C - 2.9

b, c

Single Avalanche Current

L = 0.1 mH

I

AS

- 11

Single Avalanche Energy E

AS

5.8 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

19

W

T

C

= 70 °C 12

T

A

= 25 °C 3.5

b, c

T

A

= 70 °C 2.2

b, c

Operating Junction and Storage Temperature Range T

J

, T

stg

- 50 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  5 s R

thJA

28 36

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

5.3 6.5

SiA439EDJ

www.vishay.com

Vishay Siliconix

S13-0108-Rev. A, 21-Jan-13

2

Document Number: 62819

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= - 250 μA - 20 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= - 250 μA

- 13

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

2.9

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= - 250 μA - 0.4 - 1 V

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 8 V ± 2

μA

V

DS

= 0 V, V

GS

= ± 4.5 V ± 0.5

Zero Gate Voltage Drain Current I

DSS

V

DS

= - 20 V, V

GS

= 0 V - 1

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 55 °C - 10

On-State Drain Current

a

I

D(on)

V

DS

 - 5 V, V

GS

= - 4.5 V - 10 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 5 A 0.0130 0.0165



V

GS

= - 3.7 V, I

D

= - 5 A 0.0140 0.0180

V

GS

= - 2.5 V, I

D

= - 4 A 0.0185 0.0235

V

GS

= - 1.8 V, I

D

= - 2 A 0.0300 0.0420

Forward Transconductance

a

g

fs

V

GS

= - 10 V, I

D

= - 5 A 24 S

Dynamic

b

Input Capacitance C

iss

V

DS

= - 10 V, V

GS

= 0 V, f = 1 MHz

2410

pFOutput Capacitance C

oss

265

Reverse Transfer Capacitance C

rss

245

Total Gate Charge Q

g

V

DS

= - 10 V, V

GS

= - 8 V, I

D

= - 12 A 45.5 69

nC

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 12 A

26.7 40

Gate-Source Charge Q

gs

4.5

Gate-Drain Charge Q

gd

6.4

Gate Resistance R

g

f = 1 MHz 1.8 9 18 

Turn-On Delay Time t

d(on)

V

DD

= - 10 V, R

L

= 1 

I

D

 - 10 A, V

GEN

= - 4.5 V, R

g

= 1 

25 50

ns

Rise Time t

r

20 40

Turn-Off Delay Time t

d(off)

95 190

Fall Time t

f

25 50

Turn-On Delay Time t

d(on)

V

DD

= - 10 V, R

L

= 1 

I

D

 - 10 A, V

GEN

= - 8 V, R

g

= 1 

10 20

Rise Time t

r

10 20

Turn-Off Delay Time t

d(off)

120 240

Fall Time t

f

25 50

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C - 16

A

Pulse Diode Forward Current I

SM

- 60

Body Diode Voltage V

SD

I

S

= - 10 A, V

GS

= 0 V - 0.75 - 1.2 V

Body Diode Reverse Recovery Time t

rr

I

F

= - 10 A, dI/dt = 100 A/μs, T

J

= 25 °C

16 35 ns

Body Diode Reverse Recovery Charge Q

rr

715nC

Reverse Recovery Fall Time t

a

7

ns

Reverse Recovery Rise Time t

b

9

SiA439EDJ

www.vishay.com

Vishay Siliconix

S13-0108-Rev. A, 21-Jan-13

3

Document Number: 62819

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Current vs. Gate-Source Voltage

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Current vs. Gate-to-Source Voltage

Transfer Characteristics

Capacitance

0.00

4.00

8.00

12.00

16.00

20.00

0 4 8 12 16

I

GSS

- Gate Current (mA)

V

GS

- Gate-Source Voltage (V)

T

J

= 25 °C

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 2 V

V

GS

= 2.5 V

V

GS

= 5 V thru 3 V

V

GS

= 1.5 V

0.000

0.010

0.020

0.030

0.040

0.050

0.060

0 10 20 30 40 50 60

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 1.8 V

V

GS

= 3.7 V

V

GS

= 2.5 V

V

GS

= 4.5 V

10

-2

10

-3

10

-4

10

-5

10

-6

10

-7

10

-8

10

-9

0 4 8 12 16

I

GSS

- Gate Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

0

4

8

12

16

20

0.0 0.5 1.0 1.5 2.0

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

500

1000

1500

2000

2500

3000

3500

0 4 8 12 16 20

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

SIA439EDJ-T1-GE3

SIA439EDJ-T1-GE3

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