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CJ3139KDW-G

P1-P3P4-P5
MOSFET
RoHS Device
Page 1
REV:A
Features
- High-side switching
- Case: SOT-363, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
CJ3139KDW-G (Dual P-Channel )
Dimensions in inches and (millimeter)
QW-BTR52
Comchip Technology CO., LTD.
SOT-363
Maximum Ratings (at Ta=25 °C unless otherwise noted)
Drain-source voltage
Typ. Gate-source voltage
Drain current-Continuous
Power dissipation (note 2)
Junction temperature range
Storage temperature range
Unit
Symbol
Parameter
VDSS
VGS
ID(DC)
PD
RΘJA
TJ
TSTG
Value
-20
±12
-0.66
150
833
-40 to +150
-55 to +150
V
V
A
mW
°C/W
°C
°C
Thermal resistance from junction to ambient
Comchip
S M D D i o d e S p e c i a l i s t
V(BR)DSS RDS(on)MAX
ID
-20V
520mΩ @ -4.5V
700mΩ @ -2.5V
-0.66A
- Low on-resistance
0.087(2.20)
0.079(2.00)
0.053(1.35)
0.045(1.15)
0.055(1.40)
0.047(1.20)
0.045(1.15)
0.041(1.05)
0.014(0.35)
0.006(0.15)
0.004(0.10)
0.018(0.46)
0.096(2.45)
0.085(2.15)
0.006(0.15)
0.003(0.08)
0.010(0.26)
0.000(0.00)
Company reserves the right to improve product design , functions and reliability without notice.
950mΩ(TYP) @ -1.8V
- Low threshold
- Fast switching speed
G : Gate
S : Source
D : Drain
5
4
G2
S2
D1
G1
D2
S1
2
3
1
6
6 5 4
1 2 3
- Weight: 0.006 grams (approx.)
Drain current-pulsed (note1)
IDM(pulse)
-2.64
A
Circuit diagram
Mechanical data
Drain-source breakdown voltage
VGS = 0V , ID = -250µA
Zero gate voltage drain current
Forward transconductance
Reverse transfer capacitance
Input capacitance
Switching time (note4)
Turn-on delay time
Turn-off delay time
Rise time
Fall time
VDS = -20V , VGS = 0V
V = -1.8V , GS ID = -500mA
VDS = -10V , ID = -540mA
VDD = -10V, ID = -200mA
VGS = -4.5V , RG = 10Ω
V(BR) DSS
IDSS
gfs
Coss
Crss
td(on)
tr
td(off)
tf
-20
-1
0.8
9
5.8
32.7
20.3
V
S
pF
nS
ciss
170
Page 2
REV:A
QW-BTR52
Comchip Technology CO., LTD.
MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
Dynamic (note 4)characteristics
Output capacitance
25
15
On/Off States
Electrical Characteristics (at TA=25°C unless otherwise noted)
Company reserves the right to improve product design , functions and reliability without notice.
µA
VDS = -16V , VGS = 0V
f=1MHZ
VDS = VGS , ID = -250µA
-1.1
V
-0.35
Gate threshold voltage (note 3)
VGS(th)
Gate-body leakage current
VGS = ±10V, VDS = 0V
IGSS ±20
µA
RDS(on)
V = -4.5V , GS ID = -1A
520
V = -2.5V , GS ID = -800mA
950
mΩ
700
IS = -0.5A , VGS = 0V
VSD
-1.2
V
Drain-source on-state resistance (note 3)
Drain-source diode characteristics
Drain-source diode forward voltage
(note 3)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperture.
2. This test is performed with no heat sink at Ta=25°C.
3. Pulse test: Pulse width≤300µs, Duty cycle 0.5%.≤
4. These parameters have no way to verify.
QW-BTR52
RATING AND CHARACTERISTIC CURVES (CJ3139KDW-G)
Comchip Technology CO., LTD.
Page 3
REV:A
MOSFET
Comchip
S M D D i o d e S p e c i a l i s t
Drain Current, ID (A)
Gate to Source Voltage, VGS (V)
On-Resistance, RDS(ON) ( Ω )
Gate to Source Voltage, VGS (V)
Fig.4 - RDS(ON) — VGS
On-Resistance, RDS(ON) ( Ω )
Drain Current, ID (A)
Fig.3 - RDS(ON) — ID
-1E-3
Source to Drain Voltage, VSD (V)
-0.4
-3
-0.01
Fig.5 - IS — VSD
-0.8 -1.2
-2.0
-1
-0.1
Fig.2 - Transfer Characteristics
Drain Current, (A) ID
Drain to Source Voltage, VDS (V)
0
-1 -2
-3
-4
-5
-1E-4
ID = -0.8A
-1
-2
-4 -6 -3
0 -0.4 -2.0-0.8
Source Current, Is ( A )
-0
-0.5 -1.0
-2.0
-3.0
0.0
2.0
1.2
0.8
1.6
0
0.4
1.6
2.0
-0.0
-1.2
-0.8
-1.6
-2.0
-0.4
-0.0
-1.5
-1.0
-2.0
-2.5
-0.5
0.8
1.2
Ta=25°C
-1.2
-1.6
-1.6
Company reserves the right to improve product design , functions and reliability without notice.
-3.0
Fig.1 - Output Characteristics
-1.5
-2.5
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
V
GS
= -3V
V
GS
= -2.5V
V
GS
= -1.5V
V
GS
= -4.5V
V
GS
= -10V
Ta=25°C
Ta=100°C
Pulsed
V
DS
= -5V
-5
Pulsed
Threshold Voltage, VTH ( V )
Junction Temperature, TJ (°C)
Fig.6 - Threshold Voltage
25
50
125 75
-0.4
-0.5
-0.7
-0.8
-0.6
100
ID = -250uA
0.4
P1-P3P4-P5

CJ3139KDW-G

Mfr. #:
Buy CJ3139KDW-G
Manufacturer:
Comchip Technology
Description:
MOSFET MOSFET DUAL P-CHANNEL
Lifecycle:
New from this manufacturer.
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