FEP30BP-E3/45

FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88597
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Ultrafast Rectifier
FEATURES
Power pack
Glass passivated pellet chip junction
Ultrafast recovery time
Low switching losses, high efficiency
Low thermal resistance
High forward surge capability
Solder dip 260 °C, 40 s
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
RRM
50 V, 100 V, 150 V, 200 V, 300 V,
400 V, 500 V, 600 V
I
FSM
300 A
t
rr
35 ns, 50 ns
V
F
at I
F
= 15 A 0.95 V, 1.3 V, 1.5 V
T
J
max. 150 °C
Package TO-247AD (TO-3P)
Diode variations Dual common cathode
TO-247AD (TO-3P)
1
2
3
PIN 1
PIN 3
CASE
PIN 2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 300 400 500 600 V
Maximum RMS voltage V
RMS
35 70 105 140 210 280 350 420 V
Maximum DC blocking voltage V
DC
50 100 150 200 300 400 500 600 V
Maximum average forward rectified current
at T
C
= 100 °C
I
F(AV)
30 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
300 A
Operating storage and temperature range T
J
, T
STG
-55 to +150 °C/W
FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 88597
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to case per diode mounted on heatsink
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Maximum instantaneous
forward voltage per diode
15.0 A V
F
0.95 1.3 1.5 V
Maximum DC reverse current at
rated DC blocking voltage
per diode
T
C
= 25 °C
I
R
10
μA
T
C
= 100 °C 500
Maximum reverse recovery time
per diode
I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
35 50 ns
Typical junction capacitance
per diode
4.0 V, 1 MHz C
J
175 145 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
Typical thermal resistance per diode R
JC
(1)
1.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD FEP30JP-E3/45 6.15 30 30/tube Tube
FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 88597
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
0
50
100
150
0
6
12
24
30
36
Average Forward Current (A)
Case Temperature (°C)
Resistive or Inductive Load
1
10
100
0
50
100
150
200
250
300
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1.81.61.41.2
Pulse Width = 300 μs
1 % Duty Cycle
T
J
= 125 °C
T
J
= 25 °C
50 V to 200 V
300 V to 400 V
500 V to 600 V
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
50 V to 200 V
300 V to 600 V
0.1
1
10
100
10
100
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
50 V to 400 V
500 V to 600 V

FEP30BP-E3/45

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 30 Amp 100 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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