HSMP-3862-BLKG

HSMP-386x
Surface Mount PIN Diodes
Data Sheet
Features
Unique Congurations in Surface Mount Packages
Add Flexibility
Save Board Space
Reduce Cost
Switching
Low Distortion Switching
Low Capacitance
Attenuating
Low Current Attenuating for Less Power
Consumption
Matched Diodes for Consistent Performance
Better Thermal Conductivity for Higher Power
Dissipation
Low Failure in Time (FIT) Rate
[1]
Lead-free
Note:
1. For more information see the Surface Mount PIN Reliability Data
Sheet.
Description/Applications
The HSMP-386x series of general purpose PIN diodes are
designed for two classes of applications. The rst is attenu-
ators where current consumption is the most important
design consideration. The second application for this
series of diodes is in switches where low capacitance is the
driving issue for the designer.
The HSMP-386x series Total Capacitance (C
T
) and Total
Resistance (R
T
) are typical specications. For applications
that require guaranteed performance, the general purpose
HSMP-383x series is recommended.
A SPICE model is not available for PIN diodes as SPICE
does not provide for a key PIN diode characteristic, carrier
lifetime.
Pin Connections and Package Marking, SOT-363
Notes:
1. Package marking provides orientation, identication, and date code.
2. See “Electrical Specications” for appropriate package marking.
LUx
1
2
3
6
5
4
2
Package Lead Code Identication,
SOT-23, SOT-143
(Top View)
Package Lead Code Identication,
SOT-323
(Top View)
COMMON
CATHODE
#4
COMMON
ANODE
#3
SERIES
#2
SINGLE
#0
COMMON
CATHODE
F
COMMON
ANODE
E
SERIES
C
SINGLE
B
Package Lead Code Identication,
SOT-363
(Top View)
UNCONNECTED
TRIO
L
123
654
Electrical Specications T
C
= 25°C, each diode
PIN General Purpose Diodes, Typical Specications T
A
= 25°C
Package Minimum Typical Typical
Part Number Marking Lead Breakdown Series Resistance Total Capacitance
HSMP- Code Code Conguration Voltage V
BR
(V) R
S
(Ω) C
T
(pF)
3860 L0 0 Single 50 3.0/1.5* 0.20
3862 L2 2 Series
3863 L3 3 Common Anode
3864 L4 4 Common Cathode
386B L0 B Single
386C L2 C Series
386E L3 E Common Anode
386F L4 F Common Cathode
386L LL L Unconnected Trio
Test Conditions V
R
= V
BR
I
F
= 10 mA V
R
= 50 V
Measure f = 100 MHz f = 1 MHz
I
R
≤ 10 µA I
F
= 100 mA*
Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol Parameter Unit SOT-23 SOT-323
I
f
Forward Current (1 µs Pulse) Amp 1 1
P
IV
Peak Inverse Voltage V 50 50
T
j
Junction Temperature °C 150 150
T
stg
Storage Temperature °C -65 to 150 -65 to 150
q
jc
Thermal Resistance
[2]
°C/W 500 150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is dened to be the temperature at the package pins where contact is made to
the circuit board.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid
Static Discharge.
RING
QUAD
D
1
3
2
4
See separate data sheet HSMP-386D
3
HSMP-386x Typical Parameters at T
C
= 25°C
Part Number Total Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance
HSMP- R
T
(Ω) t (ns) T
rr
(ns) C
T
(pF)
386x 22 500 80 0.20
Test Conditions I
F
= 1 mA I
F
= 50 mA V
R
= 10 V V
R
= 50 V
f = 100 MHz T
R
= 250 mA I
F
= 20 mA f = 1 MHz
90% Recovery
Typical Performance, T
C
= 25°C, each diode
Figure 1. RF Capacitance vs. Reverse Bias.
0.15
0.30
0.25
0.20
0.35
02 64101281614 18 20
TOTAL CAPACITANCE (pF)
REVERSE VOLTAGE (V)
1 GHz
100 MHz
1 MHz
120
115
110
105
100
95
90
85
11030
I
F
– FORWARD BIAS CURRENT (mA)
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current for Switch Diodes.
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
Series Switch in a
50 Microstrip and
Tested at 123 MHz
FORWARD CURRENT (mA)
Figure 4. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
T
rr
– REVERSE RECOVERY TIME (ns)
10
100
1000
10 20 30
V
R
= 5V
V
R
= 10V
V
R
= 20V
Figure 2. Typical RF Resistance vs. Forward Bias
Current.
0.01 100
1000
1
10
RESISTANCE (OHMS)
BIAS CURRENT (mA)
10
100
10.1
T
A
= +85 C
T
A
= +25 C
T
A
= –55 C
100
10
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
– FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (mA)
Figure 5. Forward Current vs. Forward
Voltage.
125 C 25 C
50 C
Equivalent Circuit Model
HSMP-386x Chip*
0.12 pF
1.5
R
j
R
s
C
j
R
j
=
12
I
0.9
R
T
= 1.5 + R
j
C
T
= C
P
+ C
j
I
= Forward Bias Current in mA
* See AN1124 for package models

HSMP-3862-BLKG

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
RF DIODE PIN 50V SOT23-3
Lifecycle:
New from this manufacturer.
Delivery:
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