© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 5
1 Publication Order Number:
MCR8S/D
MCR8SDG, MCR8SMG,
MCR8SNG
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
• Blocking Voltage to 800 V
• On−State Current Rating of 8 A RMS at 80°C
• High Surge Current Capability − 80 A
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• Immunity to dv/dt − 5 V/msec Minimum at 110°C
• These are Pb−Free Devices*
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to 110°C, Sine Wave,
50 to 60 Hz) MCR8SDG
MCR8SMG
MCR8SNG
V
DRM,
V
RRM
400
600
800
V
On-State RMS Current
(180° Conduction Angles; T
C
= 80°C)
I
T(RMS)
8.0 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 110°C)
I
TSM
80 A
Circuit Fusing Consideration (t = 8.33 ms) I
2
t 26.5 A
2
sec
Forward Peak Gate Power
(Pulse Width ≤ 10 ms, T
C
= 80°C)
P
GM
5.0 W
Forward Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
P
G(AV)
0.5 W
Forward Peak Gate Current
(Pulse Width ≤ 10 ms, T
C
= 80°C)
I
GM
2.0 A
Operating Junction Temperature Range T
J
−40 to 110 °C
Storage Temperature Range T
stg
−40 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
8 AMPERES RMS
400 thru 800 VOLTS
TO−220AB
CASE 221A−09
STYLE 3
1
www.onsemi.com
MARKING
DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
x = D, M, or N
G = Pb−Free Package
AKA = Diode Polarity
2
3
Device Package Shipping
ORDERING INFORMATION
MCR8SDG TO−220AB
(Pb−Free)
50 Units / Rail
MCR8SNG TO−220AB
(Pb−Free)
50 Units / Rail
MCR8SMG TO−220AB
(Pb−Free)
50 Units / Rail
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
AY WW
MCR8SxG
AKA
