APTGF90DA60T1G
APTGF90DA60T1G – Rev 1 October, 2012
www.microsemi.com
4
7
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
01234
Ic, Collector Current (A)
V
CE
, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
01234
Ic, Collector Current (A)
V
CE
, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
012345678910
V
GE
, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
Ic=180A
Ic=90A
Ic=45A
0
1
2
3
4
5
6
7
8
6 8 10 12 14 16
V
GE
, Gate to Emitter Voltage (V)
V
CE
, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
T
J
= 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=180A
Ic=90A
Ic=45A
0
0.5
1
1.5
2
2.5
3
3.5
4
25 50 75 100 125
T
J
, Junction Temperature (°C)
V
CE
, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.80
0.90
1.00
1.10
1.20
25 50 75 100 125
T
J
, Junction Temperature (°C)
Collector to Emitter Breakdown
Voltage (Normalized)
Breakdown Voltage vs Junction Temp.
0
20
40
60
80
100
120
25 50 75 100 125 150
T
C
, Case Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
Gate Charge
V
CE
=120V
V
CE
=300V
V
CE
=480V
0
2
4
6
8
10
12
14
16
18
0 50 100 150 200 250 300 350
Gate Charge (nC)
GE
, Gate to Emitter Voltage (V)
I
C
= 90A
T
J
= 25°C
