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NRVB130T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
April, 2013 − Rev. 5
1 Publication Order Number:
MBR130T1/D
MBR130, NRVB130
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Rating:
♦ Human Body Model = 3
♦ Machine Model = C
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
• These are Pb−Free Packages*
Mechanical Characteristics
• Device Marking: S3
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
http://onsemi.com
SOD−123
CASE 425
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
30 VOLTS
MARKING DIAGRAM
S3 MG
G
1
S3 = Specific Device Code
M = Date Code
G = Pb−Free Package
MBR130T1G,
NRVB130T1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
10,000 /
Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
MBR130T3G,
NRVB130T3G
SOD−123
(Pb−Free)
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
MBR130, NRVB130
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 V
Average Rectified Forward Current
(Rated V
R
) T
L
= 65°C
I
F(AV)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
I
FSM
5.5
A
Storage Temperature Range T
stg
−65 to +125 °C
Operating Junction Temperature T
J
−65 to +125 °C
Voltage Rate of Change (Rated V
R
) dv/dt 1000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Ambient (Note 1) R
θ
JA
230 °C/W
Thermal Resistance, Junction to Lead (Note 1) R
θ
JL
108 °C/W
1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 2)
(I
F
= 0.1 A, T
J
= 25°C)
(I
F
= 0.7 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 25°C)
V
F
−
−
0.47
0.35
0.45
−
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 25°C)
(V
R
= 5 V, T
C
= 25°C)
I
R
60
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
MBR130, NRVB130
http://onsemi.com
3
10
1
0.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.6
Figure 2. Typical Forward Voltage
T
J
= 125°C
75°C 25°C
0.55 0.65
10
1
0.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.6
T
J
= 125°C
75°C 25°C
0.55 0.6
5
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
I
F
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
0.01
0.001
0.0001
0.00001
302520151050
Figure 4. Typical Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
3
5
302520151050
180
160
140
120
100
80
60
40
20
0
200
Figure 5. Current Derating, Lead, R
q
JL
= 1085C/W
T
L
, LEAD TEMPERATURE (°C)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
120100806040200
Figure 6. Forward Power Dissipation
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
1.
8
1.41.210.80.60.40.20
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
0
0.8
0.9
I
R
, REVERSE CURRENT (AMPS)
0.000001
0.0000001
C, CAPACITANCE (pF)
T
J
= 125°C
75°C
25°C
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
SQUARE
WAVE
RATED
VOLTAGE
APPLIED
dc
P
F(AV)
, AVERAGE FORWARD POWER
DISSIPATION (WATTS)
1.6
SQUARE
WAVE
dc
P1-P3P4-P4

NRVB130T1G

Mfr. #:
Buy NRVB130T1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 30V SCHOTTKY RECT
Lifecycle:
New from this manufacturer.
Delivery:
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