New Product
MBR60100CT
Vishay General Semiconductor
Document Number: 88892
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode High Voltage Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
30 A x 2
V
RRM
100 V
I
FSM
350 A
V
F
at I
F
= 30 A 0.64 V
T
J
max. 175 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR60100CT UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Working peak reverse voltage V
RWM
100 V
Maximum DC blocking voltage V
DC
100 V
Maximum average forward rectified current
total device
per diode
I
F(AV)
60
30
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
350 A
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz I
RRM
1.0 A
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) E
RSM
25 mJ
Non-repetitive avalanche energy per diode at 25 °C, I
AS
= 1.0 A, L = 40 mH E
AS
20 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/µs
Operating junction and storage temperature range T
J
, T
STG
- 65 to + 175 °C