NTP75N03-006

© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 6
1 Publication Order Number:
NTP75N03−06/D
NTP75N03−06,
NTB75N03−06
Power MOSFET
75 Amps, 30 Volts
N−Channel TO−220 and D
2
PAK
This 20 V
GS
gate drive vertical Power MOSFET is a general
purpose part that provides the “best of design” available today in a low
cost power package. This power MOSFET is designed to withstand
high energy in the avalanche and commutation modes. The
Drain−to−Source Diode has a fast response with soft recovery.
Features
Ultra−Low R
DS(on)
, Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
High Avalanche Energy Capability
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Pb−Free Packages are Available
Typical Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTP1306 and MTB1306
D
G
N−Channel
S
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
75N
03−06G
AYWW
1
Gate
3
Source
4
Drain
2
Drain
75N
03−06G
AYWW
1
Gate
3
Sourc
e
4
Drain
2
Drain
http://onsemi.com
5.3 mW @ 10 V
R
DS(on)
TYP
75 A
I
D
MAXV
(BR)DSS
30 V
1
2
3
4
D
2
PAK
CASE 418AA
STYLE 2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
N75N03−06 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
NTP75N03−06, NTB75N03−06
http://onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 Vdc
Drain−to−Gate Voltage (RGS = 10 MW)
V
DGB
30 Vdc
Gate−to−Source Voltage − Continuous V
GS
±20 Vdc
Non−repetitive (tp 10 ms) V
GS
±24 Vdc
Drain Current
− Continuous @ T
C
= 25°C
− Continuous @ T
C
= 100°C
− Single Pulse (tp 10 ms)
I
D
I
D
I
DM
75
59
225
Adc
Apk
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
P
D
125
1.0
2.5
W
W/°C
W
Operating and Storage Temperature Range T
J
and T
stg
−55 to 150 °C
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 38 Vdc, V
GS
= 10 Vdc, L = 1 mH, I
L
(pk) = 55 A, V
DS
= 40 Vdc)
E
AS
1500 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
R
q
JC
R
q
JA
R
q
JA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8 in from case for 10 seconds T
L
260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
Device Package Shipping
NTP75N03−06 TO−220 50 Units / Rail
NTP75N03−06G TO−220
(Pb−Free)
50 Units / Rail
NTB75N03−06
D
2
PAK
50 Units / Rail
NTB75N03−06G
D
2
PAK
(Pb−Free)
50 Units / Rail
NTB75N03−06T4
D
2
PAK
800 Units / Tape & Reel
NTB75N03−06T4G
D
2
PAK
(Pb−Free)
800 Units / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTP75N03−06, NTB75N03−06
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Negative)
V
(BR)DSS
30
−57
Vdc
mV°C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ±20 Vdc, V
DS
= 0 Vdc) I
GSS
±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.6
−6
2.0
Vdc
mV°C
Static Drain−to−Source On−Resistance (Note 2)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc)
R
DS(on)
5.3 6.5
mW
Static Drain−to−Source On Resistance (Note 2)
(V
GS
= 10 Vdc, I
D
= 75 Adc)
(V
GS
= 10 Vdc, I
D
= 37.5 Adc, T
J
= 125°C)
V
DS(on)
0.53
0.35
0.68
0.50
Vdc
Forward Transconductance (Notes 2 & 4) (V
DS
= 3 Vdc, I
D
= 20 Adc) g
FS
58 Mhos
DYNAMIC CHARACTERISTICS (Note 4)
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0,
f = 1.0 MHz)
C
iss
4398 5635
pF
Output Capacitance C
oss
1160 1894
Transfer Capacitance C
rss
317 430
SWITCHING CHARACTERISTICS (Notes 3 and 4)
Turn−On Delay Time
(V
GS
= 5.0 Vdc,
V
DD
= 20 Vdc, I
D
= 75 Adc,
R
G
= 4.7 W) (Note 2)
t
d(on)
16 30
ns
Rise Time t
r
130 200
Turn−Off Delay Time t
d(off)
65 110
Fall Time t
f
105 175
Gate Charge
(V
GS
= 5.0 Vdc,
I
D
= 75 Adc,
V
DS
= 24 Vdc) (Note 2)
Q
T
57 75
nC
Q
1
11 15
Q
2
34 50
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 75 Adc, V
GS
= 0 Vdc)
(I
S
= 75 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
(Note 2)
V
SD
1.19
1.09
1.25
Vdc
Reverse Recovery Time
(Note 4)
(I
S
= 75 Adc, V
GS
= 0 Vdc
dl
S
/dt = 100 A/ms) (Note 2)
t
rr
37
ns
t
a
20
Reverse Recovery Stored
Charge (Note 4)
t
b
17 mC
Q
RR
0.023
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. From characterization test data.

NTP75N03-006

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 75A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
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