2015-12-23 2
Version 1.3 SFH 213 FA
Maximum Ratings (T
A
= 25 °C)
Characteristics (T
A
= 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range T
op
; T
stg
-40 ... 100 °C
Reverse voltage V
R
20 V
Reverse voltage
(t < 2 min)
V
R
50 V
Total Power dissipation P
tot
150 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
V
ESD
2000 V
Parameter Symbol Values Unit
Photocurrent
(V
R
= 5 V, λ = 870 nm, E
e
= 1 mW/cm
2
)
(typ (min)) I
P
90 (≥ 65) µA
Wavelength of max. sensitivity (typ) λ
S max
900 nm
Spectral range of sensitivity (typ) λ
10%
(typ) 750
... 1100
nm
Radiant sensitive area (typ) A 1.00 mm
2
Dimensions of radiant sensitive area (typ) L x W 1 x 1 mm x
mm
Half angle (typ) ϕ ± 10 °
Dark current
(V
R
= 20 V)
(typ (max)) I
R
1 (≤ 5) nA
Spectral sensitivity of the chip
(λ = 870 nm)
(typ) S
λ typ
0.65 A / W
Quantum yield of the chip
(λ = 870 nm)
(typ) η 0.93 Electro
ns
/Photon
Open-circuit voltage
(E
e
= 0.5 mW/cm
2
, λ = 870 nm)
(typ (min)) V
O
380 (≥ 300) mV
Short-circuit current
(E
e
= 0.5 mW/cm
2
, λ = 870 nm)
(typ) I
SC
42 µA
Rise and fall time
(V
R
= 20 V, R
L
= 50 Ω, λ = 850 nm)
(typ) t
r
, t
f
0.005 µs
Forward voltage
(I
F
= 100 mA, E = 0)
(typ) V
F
1.3 V
Capacitance
(V
R
= 0 V, f = 1 MHz, E = 0)
(typ) C
0
11 pF
Temperature coefficient of V
O
(typ) TC
V
-2.6 mV / K
