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74HC00DR2G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2007
March, 2007 - Rev. 1
1 Publication Order Number:
74HC00/D
74HC00
Quad 2-Input NAND Gate
High-Performance Silicon-Gate CMOS
The 74HC00 is identical in pinout to the LS00. The device inputs are
compatible with Standard CMOS outputs; with pullup resistors, they
are compatible with LSTTL outputs.
Features
•Output Drive Capability: 10 LSTTL Loads
•Outputs Directly Interface to CMOS, NMOS and TTL
•Operating Voltage Range: 2.0 to 6.0 V
•Low Input Current: 1.0 mA
•High Noise Immunity Characteristic of CMOS Devices
•In Compliance With the JEDEC Standard No. 7A Requirements
•ESD Performance: HBM > 2000 V; Machine Model > 200 V
•Chip Complexity: 32 FETs or 8 Equivalent Gates
•These are Pb-Free Devices
3
Y1
1
A1
PIN 14 = V
CC
PIN 7 = GND
LOGIC DIAGRAM
2
B1
6
Y2
4
A2
5
B2
8
Y3
9
A3
10
B3
11
Y4
12
A4
13
B4
Y = AB
Pinout: 14-Lead Packages (Top View)
1314 12 11 10 9 8
21 34567
V
CC
B4 A4 Y4 B3 A3 Y3
A1 B1 Y1 A2 B2 Y2 GND
MARKING
DIAGRAMS
HC00 = Device Code
A = Assembly Location
WL or L = Wafer Lot
Y = Year
WW or W = Work Week
G or = Pb-Free Package
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
H
H
H
L
Y
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
TSSOP-14
DT SUFFIX
CASE 948G
14
1
SOIC-14
D SUFFIX
CASE 751A
14
1
HC00G
AWLYWW
1
14
HC
00
ALYW
1
14
(Note: Microdot may be in either location)
74HC00
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
V
in
DC Input Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ±20 mA
I
out
DC Output Current, per Pin ±25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±50 mA
P
D
Power Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature – 65 to + 150
C
T
L
Lead Temperature, 1 mm from Case for 10 s
SOIC or TSSOP Package
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
†Derating — SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: - 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High- Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage
(Referenced to GND)
0 V
CC
V
T
A
Operating Temperature, All Package Types – 55 + 125
C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
ORDERING INFORMATION
Device Package Shipping
†
74HC00DR2G SOIC-14
(Pb-Free)
2500/Tape & Reel
74HC00DTR2G TSSOP-14*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb-Free.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high-impedance
circuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
74HC00
http://onsemi.com
3
DC CHARACTERISTICS (Voltages Referenced to GND)
V
CC
(V)
Guaranteed Limit
Symbol Parameter Condition -55 to 25°C ≤85°C ≤125°C Unit
V
IH
Minimum High-Level
Input Voltage
V
out
= 0.1V or V
CC
-0.1V
|I
out
| ≤ 20mA
2.0
3.0
4.5
6.0
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
1.50
2.10
3.15
4.20
V
V
IL
Maximum Low-Level
Input Voltage
V
out
= 0.1V or V
CC
- 0.1V
|I
out
| ≤ 20mA
2.0
3.0
4.5
6.0
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
V
V
OH
Minimum High-Level
Output Voltage
V
in
= V
IH
or V
IL
|I
out
| ≤ 20mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
in
=V
IH
or V
IL
|I
out
| ≤ 2.4mA
|I
out
| ≤ 4.0mA
|I
out
| ≤ 5.2mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
V
OL
Maximum Low-Level
Output Voltage
V
in
= V
IH
or V
IL
|I
out
| ≤ 20mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
or V
IL
|I
out
| ≤ 2.4mA
|I
out
| ≤ 4.0mA
|I
out
| ≤ 5.2mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
I
in
Maximum Input Leakage
Current
V
in
= V
CC
or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0mA
6.0 2.0 20 40
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High- Speed CMOS Data Book
(DL129/D).
AC CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6 ns)
V
CC
(V)
Guaranteed Limit
Symbol Parameter -55 to 25°C ≤85°C ≤125°C Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
27
15
13
95
32
19
16
110
36
22
19
ns
C
in
Maximum Input Capacitance 10 10 10 pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High- Speed CMOS Data Book (DL129/D).
C
PD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25°C, V
CC
= 5.0 V, V
EE
= 0 V
pF
22
* Used to determine the no- load dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High- Speed CMOS Data Book (DL129/D).
P1-P3P4-P6P7-P7

74HC00DR2G

Mfr. #:
Buy 74HC00DR2G
Manufacturer:
ON Semiconductor
Description:
Logic Gates QUAD 2 INPUT NAND GATE
Lifecycle:
New from this manufacturer.
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