50WQ10FN

SCHOTTKY RECTIFIER
5.5 Amp
50WQ10FN
Major Ratings and Characteristics
I
F(AV)
Rectangular 5.5 A
waveform
V
RRM
100 V
I
FSM
@ tp = 5 μs sine 330 A
V
F
@
5 Apk, T
J
= 125°C 0.63 V
T
J
range - 40 to 150 °C
Characteristics Values Units
Description/ Features
The 50WQ10FN surface mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Popular D-PAK outline
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
I
F(AV)
= 5.5Amp
V
R
= 100V
Anod
e
1
3
Base
Cathode
A
node
4, 2
Bulletin PD-20526 rev. G 05/06
D-PAK (TO-252AA)
Document Number: 93361
www.vishay.com
1
50WQ10FN
Bulletin PD-20526 rev. G 05/06
Part number 50WQ10FN
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
V
FM
Max. Forward Voltage Drop 0.77 V @ 5A
* See Fig. 1 (1) 0.91 V @ 10A
0.63 V @ 5A
0.74 V @ 10A
I
RM
Max. Reverse Leakage Current 1 mA T
J
= 25 °C
* See Fig. 2 (1) 4 mA T
J
= 125 °C
V
F(TO)
Threshold Voltage 0.47 V T
J
= T
J
max.
r
t
Forward Slope Resistance 21.46 mΩ
C
T
Typical Junction Capacitance 183 pF V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters 50WQ... Units Conditions
(1) Pulse Width < 300μs, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) -40 to 150 °C
T
stg
Max. Storage Temperature Range -40 to 150 °C
R
thJC
Max. Thermal Resistance Junction 3.0 °C/W DC operation * See Fig. 4
to Case
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D - PAK Similar to TO-252AA
Device Marking 50WQ10FN
Thermal-Mechanical Specifications
Parameters 50WQ... Units Conditions
100
I
F(AV)
Max. Average Forward Current 5.5 A 50% duty cycle @ T
C
= 135°C, rectangular wave form
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive 330 5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7 110 10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy 6.0 mJ T
J
= 25 °C, I
AS
= 0.5 Amps, L = 40 mH
I
AR
Repetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated V
RRM
applied
A
Parameters 50WQ... Units Conditions
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
Document Number: 93361
www.vishay.com
2
50WQ10FN
Bulletin PD-20526 rev. G 05/06
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0 102030405060708090100
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Volta ge - V (V)
Re v e r se C u rr e n t - I ( m A )
T = 150°C
J
10
100
1000
020406080100
T = 2 5 ° C
J
R
T
Junction Capac it anc e - C (pF)
Reverse Voltage - V (V)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
thJC
t , Recta ngular Pulse Duration (Sec onds)
Si n g l e Pu l se
( Th e r m a l Re si st a n c e )
1
Thermal Impedance Z (°C/W)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty fac tor D = t / t
2. Peak T = P x Z + T
J
DM
thJC
C
1
2
2
t
1
t
P
DM
1
10
100
1000
00.511.522.533.5
Instantaneous Forward Current - I (A)
F
FM
Forward Volta ge Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Document Number: 93361
www.vishay.com
3

50WQ10FN

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-50WQ10FN-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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