1N4148T-72

1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
Switching diode
1N4531 / 1N4148 / 1N4150 / 1N4448
This product is available only outside of Japan.
z
zz
z
Application
High-speed switching
z
zz
z
Features
1) Glass sealed envelope. (MSD, GSD)
2) High speed.
3) High reliability.
z
zz
zConstruction
Silicon epitaxial planar
z
zz
z
External dimensions
(Units : mm)
φ 0.5
±
0.1
C
29
±1
29
±1
CATHODE BAND (BLACK)
3.8
±
0.2
A
φ 1.8
±
0.2
Type No.
ROHM : GSD
EIAJ :
JEDEC : DO-35
φ 0.5
±
0.1
C
29
±1
29
±1
CATHODE BAND (BLACK)
2.7
±
0.3
A
φ 1.8
±
0.2
Type No.
ROHM : MSD
EIAJ :
JEDEC : DO-34
1N4531
1N4148 / 1N4150 / 1N4448
z
zz
z
Absolute maximum ratings
(Ta = 25°C)
Type
1N4148 100
65
~
+20065
~
+200
(V)
V
RM
75
(V)
V
R
450
(mA)
I
FM
150
(mA)
I
O
200
(mA)
I
F
2
(A)
1µs
I
FSM
500
(mW)
P
200
1N4531 100
65
~
+20065
~
+200
75 450 150 200 2 500 200
1N4150 50
65
~
+20065
~
+200
50 600 200 250 4 500 200
1N4448
100
65
~
+20065
~
+200
75 450 150 200 2 500 200
(
°C
)
Tj
(
°C
)
Topr
(
°C
)
Tstg
z
zz
z
Electrical characteristics
(Ta = 25°C)
Type
0.1mA
1.0
0.66
0.62
0.74
0.76
0.86
0.82
0.92
1.0
0.87
1.0
0.54
0.62
0.72
@
0.25mA
@
1mA
@
2mA
@
5mA
@
10mA
@
20mA
@
30mA
@
50mA
@
100mA
@
200mA
@
250mA
@
5µA
75 100 50.0 20 4 4
0.025
5.0
20
75
50 0.1 50 100.0 50 2.5 4
100 50.0 20 4 4
@
100µA
@
@150
°C
V
R
(V)
@25
°C
V
R
(V)
t
rr
(ns)C
r
(pF)I
R
(µA) Max.BV (V) Min.V
F
(V)
I
F
=10mA
f=1MHz
V
R
=0
R
L
=100
V
R
=6V
1N4148
1.0
75 100 50.0 20 4 4
0.025
5.0
20
75
1N4531
1N4150
1N4448
0.025
5.0
20
75
The upper figure is the minimum V
F
and the lower figure is the maximum V
F
value.
1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
z
zz
zElectrical characteristic curves (Ta = 25°C)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.2
0.5
1
2
5
10
20
50
100
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
Ta=125
°C
Ta=75
°C
Ta=
25
°C
Ta=−25
°C
0 20 40 60 80 100 120
3
10
30
100
300
1000
3000
REVERSE VOLTAGE : V
R
(
V)
REVERSE CURRENT : I
R
(
nA)
Fig. 2 Reverse characteristics
70°C
50°C
100°C
Ta=25°C
0
0
10 20 30
0.5
1.0
1.5
2.0
2.5
3.0
51525
f=1MHz
REVERSE VOLTAGE : VR (V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristics
Fig. 4 Reverse recovery time
characteristics
0
0
10 20 30
1
2
3
V
R
=
6V
I
rr
=
1/10I
R
REVERSE RECOVERY TIME : trr
(
ns)
FORWARD CURRENT : I
F
(
mA)
0.1 1 10 100 1000 10000
1
2
5
10
20
50
100
PULSE
Single pulse
PULSE WIDTH : Tw (ms)
SURGE CURRENT : I
surge (
A)
Fig. 5 Surge current characteristics
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
50
0.01µF
100ns
INPUT
D.U.T.
I
R
0.1I
R
t
rr
OUTPUT
0
5
Fig. 6 Reverse recovery time (t
rr
) measurement circuit

1N4148T-72

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
Diodes - General Purpose, Power, Switching SW 100V 150MA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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