©2003 Fairchild Semiconductor Corporation
July 2003
FDB13AN06A0 / FDP13AN06A0 Rev. A1
FDB13AN06A0 / FDP13AN06A0
FDB13AN06A0 / FDP13AN06A0
N-Channel PowerTrench
®
MOSFET
60V, 62A, 13.5mΩ
Features
•r
DS(ON)
= 11.5mΩ (Typ.), V
GS
= 10V, I
D
= 62A
•Q
g
(tot) = 22nC (Typ.), V
GS
= 10V
• Low Miller Charge
•Low Q
RR
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82555
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 60 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
62 A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 44 A
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 43
o
C/W) 10.9 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 56 mJ
P
D
Power dissipation 115 W
Derate above 25
o
C0.77W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case TO-220,TO-263 1.3
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2) 62
o
C/W
R
θJA
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area 43
o
C/W
D
G
S
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
DRAIN
DRAIN
GATE
SOURCE
(FLANGE)
