CY7C109BN-15ZXCT

128K x 8 Static RAM
CY7C109BN
CY7C1009BN
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-06430 Rev. ** Revised February 1, 2006
Features
•High speed
—t
AA
= 12 ns
Low active power
495 mW (max. 12 ns)
Low CMOS standby power
55 mW (max.) 4 mW
2.0V Data Retention
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE
1
, CE
2
, and OE options
Functional Description
[1]
The CY7C109BN/CY7C1009BN is a high-performance
CMOS static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE
1
), an active HIGH Chip Enable (CE
2
), an active LOW
Output Enable (OE
), and three-state drivers. Writing to the
device is accomplished by taking Chip Enable One (CE
1
) and
Write Enable (WE
) inputs LOW and Chip Enable Two (CE
2
)
input HIGH. Data on the eight I/O pins (I/O
0
through I/O
7
) is
then written into the location specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable One (CE
1
) and Output Enable (OE) LOW while forcing
Write Enable (WE
) and Chip Enable Two (CE
2
) HIGH. Under
these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
The CY7C109BN is available in standard 400-mil-wide SOJ
and 32-pin TSOP type I packages. The CY7C1009BN is
available in a 300-mil-wide SOJ package. The CY7C1009BN
and CY7C109BN are functionally equivalent in all other
respects.
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
14
15
Logic Block Diagram Pin Configurations
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
ROW DECODER
SENSE AMPS
INPUT BUFFER
POWER
DOWN
WE
OE
I/O
0
CE
2
I/O
1
I/O
2
I/O
3
512x256x8
ARRAY
I/O
7
I/O
6
I/O
5
I/O
4
A
0
A
11
A
13
A
12
A
A
10
CE
1
A
A
16
A
9
1
2
3
4
5
6
7
8
9
10
11
14
19
20
24
23
22
21
25
28
27
26
Top View
SOJ
12
13
29
32
31
30
16
15
17
18
GND
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
WE
V
CC
A
15
A
13
A
8
A
9
I/O
7
I/O
6
I/O
5
I/O
4
A
2
NC
I/O
0
I/O
1
I/O
2
CE
1
OE
A
10
I/O
3
A
1
A
0
A
11
CE
2
A
6
A
7
A
16
A
14
A
12
WE
V
CC
A
4
A
13
A
8
A
9
OE
TSOP I
Top View
(not to scale)
1
6
2
3
4
5
7
32
27
31
30
29
28
26
21
25
24
23
22
19
20
I/O
2
I/O
1
GND
I/O
7
I/O
4
I/O
5
I/O
6
I/O
0
CE
A
11
A
5
17
18
8
9
10
11
12
13
14
15
16
CE
2
A
15
NC
A
10
I/O
3
A
1
A
0
A
3
A
2
[+] Feedback
CY7C109BN
CY7C1009BN
Document #: 001-06430 Rev. ** Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[2]
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[2]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
.................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA
Selection Guide
7C109B-12
7C1009B-12
7C109B-15
7C1009B-15
7C109B-20
7C1009B-20 Unit
Maximum Access Time 12 15 20 ns
Maximum Operating Current 90 80 75 mA
Maximum CMOS Standby Current 10 10 10 mA
L 2 2 2 mA
Operating Range
Range
Ambient
Temperature V
CC
Commercial 0°C to +70°C 5V ± 10%
Industrial 40°C to +85°C 5V ± 10%
Electrical Characteristics Over the Operating Range
Parameter Description Test Conditions
7C109BN-12
7C1009BN-12
7C109BN-15
7C1009BN-15
7C109BN-20
7C1009BN-20
UnitMin. Max. Min. Max. Min. Max.
V
OH
Output HIGH Voltage V
CC
= Min., I
OH
= –4.0 mA 2.4 2.4 2.4 V
V
OL
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA 0.4 0.4 0.4 V
V
IH
Input HIGH Voltage 2.2 V
CC
+ 0.3 2.2 V
CC
+ 0.3 2.2 V
CC
+ 0.3 V
V
IL
Input LOW Voltage
[2]
–0.3 0.8 –0.3 0.8 –0.3 0.8 V
I
IX
Input Leakage
Current
GND < V
I
< V
CC
–1 +1 –1 +1 –1 +1 µA
I
OZ
Output Leakage
Current
GND < V
I
< V
CC
,
Output Disabled
–5 +5 –5 +5 –5 +5 µA
I
OS
Output Short
Circuit Current
[3]
V
CC
= Max., V
OUT
= GND –300 –300 –300 mA
I
CC
V
CC
Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
90 80 75 mA
I
SB1
Automatic CE
Power-Down Current
TTL Inputs
Max. V
CC
, CE
1
> V
IH
or CE
2
< V
IL
, V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
45 40 30 mA
I
SB2
Automatic CE
Power-Down Current
CMOS Inputs
Max. V
CC
,
CE
1
> V
CC
– 0.3V,
or CE
2
< 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
10 10 10 mA
L2 2 2mA
Capacitance
[4]
Parameter Description Test Conditions Max. Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= 5.0V
9pF
C
OUT
Output Capacitance 8 pF
Notes:
2. Minimum voltage is –2.0V for pulse durations of less than 20 ns.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
[+] Feedback
CY7C109BN
CY7C1009BN
Document #: 001-06430 Rev. ** Page 3 of 9
AC Test Loads and Waveforms
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
3 ns 3 ns
OUTPUT
R1 480
R1 480
R2
255
R2
255
167
Equivalent to: VENIN EQUIVALENT
1.73V
THÉ
Switching Characteristics
[5]
Over the Operating Range
Parameter Description
7C109BN-12
7C1009BN-12
7C109BN-15
7C1009BN-15
7C109BN-20
7C1009BN-20
UnitMin. Max. Min. Max. Min. Max.
Read Cycle
t
RC
Read Cycle Time 12 15 20 ns
t
AA
Address to Data Valid 12 15 20 ns
t
OHA
Data Hold from Address Change 3 3 3 ns
t
ACE
CE
1
LOW to Data Valid, CE
2
HIGH to Data
Valid
12 15 20 ns
t
DOE
OE LOW to Data Valid 6 7 8 ns
t
LZOE
OE LOW to Low Z 0 0 0 ns
t
HZOE
OE HIGH to High Z
[6, 7]
678ns
t
LZCE
CE
1
LOW to Low Z, CE
2
HIGH to Low Z
[7]
333ns
t
HZCE
CE
1
HIGH to High Z, CE
2
LOW to High Z
[6, 7]
678ns
t
PU
CE
1
LOW to Power-Up, CE
2
HIGH to Power-Up 0 0 0 ns
t
PD
CE
1
HIGH to Power-Down, CE
2
LOW to
Power-Down
12 15 20 ns
Write Cycle
[8]
t
WC
Write Cycle Time
[9]
12 15 20 ns
t
SCE
CE
1
LOW to Write End, CE
2
HIGH to Write End 10 12 15 ns
t
AW
Address Set-Up to Write End 10 12 15 ns
t
HA
Address Hold from Write End 0 0 0 ns
t
SA
Address Set-Up to Write Start 0 0 0 ns
t
PWE
WE Pulse Width 10 12 12 ns
t
SD
Data Set-Up to Write End 7 8 10 ns
t
HD
Data Hold from Write End 0 0 0 ns
t
LZWE
WE HIGH to Low Z
[7]
333ns
t
HZWE
WE LOW to High Z
[6, 7]
678ns
Notes:
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
OL
/I
OH
and 30-pF load capacitance.
6. t
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
7. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
8. The internal write time of the memory is defined by the overlap of CE
1
LOW, CE
2
HIGH, and WE LOW. CE
1
and WE must be LOW and CE
2
HIGH to initiate a
write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the
signal that terminates the write.
9. The minimum write cycle time for Write Cycle No. 3 (WE
controlled, OE LOW) is the sum of t
HZWE
and t
SD
.
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CY7C109BN-15ZXCT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
IC SRAM 1M PARALLEL 32TSOP I
Lifecycle:
New from this manufacturer.
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