BUK764R0-55B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 22 April 2011 3 of 14
NXP Semiconductors
BUK764R0-55B
N-channel TrenchMOS standard level FET
4. Limiting values
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
[3] Refer to document 9397 750 12572 for further information.
[4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
[5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[6] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[7] Refer to application note AN10273 for further information.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 55 V
V
DGR
drain-gate voltage R
GS
=20kΩ -55V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1;
see Figure 4
[1]
-75A
[2][3]
- 193 A
T
mb
=100°C; V
GS
= 10 V; see Figure 1
[1]
-75A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
see Figure 4
- 774 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 300 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[2][1]
- 193 A
[1]
-75A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 774 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=75A; V
sup
≤ 55 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
-1.2J
E
DS(AL)R
repetitive drain-source
avalanche energy
see Figure 3
[4][5][6][
7]
--J
