Sheet No.: D2-A05902EN
11
PC942J00000F Series
■ Design Considerations
Transistor of detector side in bipolar configuration may be damaged by static electricity due to its minute de-
sign.
When handling these devices, general countermeasure against static electricity should be taken to avoid
breakdown of devices or degradation of characteristics.
● Notes about static electricity
In order to stabilize power supply line, we should certainly recommend to connect a by-pass capacitor of
0.01µF or more between V
CC
and GND near the device.
In case that some sudden big noise caused by voltage variation is provided between primary and secondary
terminals of photocoupler some current caused by it is floating capacitance may be generated and result in
false operation since current may go through IRED or current may change.
If the photocoupler may be used under the circumstances where noise will be generated we recommend to
use the bypass capacitors at the both ends of IRED.
The detector which is used in this device, has parasitic diode between each pins and GND.
There are cases that miss operation or destruction possibly may be occurred if electric potential of any pin
becomes below GND level even for instant.
Therefore it shall be recommended to design the circuit that electric potential of any pin does not become
below GND level.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Design guide
