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VS-UFB210FA40P

P1-P3P4-P6P7-P7
VS-UFB210FA40P
www.vishay.com
Vishay Semiconductors
Revision: 22-Jul-13
1
Document Number: 93994
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Ultrafast Rectifier Module, 210 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
J
max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-UFB210FA40P insulated modules integrate two
state of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
Note
(1)
Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.
PRODUCT SUMMARY
V
R
400 V
I
F(AV)
per module at T
C
= 133 °C 210 A
t
rr
40 ns
Type Modules - Diode FRED Pt
®
Package SOT-227
SOT-227
1
4
2
3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
400 V
Continuous forward current per diode I
F
(1)
T
C
= 90 °C 210
A
Single pulse forward current per diode I
FSM
T
C
= 25 °C 1300
Maximum power dissipation per module P
D
T
C
= 90 °C 531 W
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500 V
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 400 - -
V
Forward voltage V
FM
I
F
= 100 A - 1.06 1.24
I
F
= 100 A, T
J
= 175 °C - 0.85 0.95
Reverse leakage current I
RM
V
R
= V
R
rated - 1.3 50 μA
T
J
= 175 °C, V
R
= V
R
rated - 0.36 4 mA
Junction capacitance C
T
V
R
= 400 V - 100 - pF
VS-UFB210FA40P
www.vishay.com
Vishay Semiconductors
Revision: 22-Jul-13
2
Document Number: 93994
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 40 -
nsT
J
= 25 °C
I
F
= 150 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-93-
T
J
= 125 °C - 172 -
Peak recovery current I
RRM
T
J
= 25 °C - 10.5 -
A
T
J
= 125 °C - 20.2 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 490 -
nC
T
J
= 125 °C - 1740 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 0.32
°C/WJunction to case, both leg conducting - - 0.16
Case to heatsink R
thCS
Flat, greased surface - 0.1 -
Weight -30- g
Mounting torque --1.3Nm
Case style SOT-227
1
10
T
J
= 175 °C
T
J
= 25 °C
0
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1000
0.5 1.0 1.5 2.0 2.5
0.01
0.1
1
10
100
0 200 300
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
400100
0.001
1000
T
J
= 175 °C
T
J
= 25 °C
1000
10
100 1000
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10 000
100
VS-UFB210FA40P
www.vishay.com
Vishay Semiconductors
Revision: 22-Jul-13
3
Document Number: 93994
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
0.01
0.1
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
1
10
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal resistance)
DC
0
25
50
75
100
125
150
175
0 50 100 150 200 250 300 350
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
DC
Square wave (D = 0.5)
80 % rated V
R
applied
See note
(1)
Forward Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
100
200
300
400
500
0 50 100 150 200 250 300 350
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
100
200
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
150
250
50
I
F
= 150 A
I
F
= 75 A
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
1000
5000
3500
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
2500
4000
0
500
1500
3000
2000
4500
I
F
= 150 A
I
F
= 75 A
P1-P3P4-P6P7-P7

VS-UFB210FA40P

Mfr. #:
Buy VS-UFB210FA40P
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers Output & SW Modules - SOT-227 FRED
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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