IRF7450TRPBF Datasheet IRF7450TRPBF, IRF7450PBF | P1-P3

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10/12/04

IRF7450PbF

SMPS MOSFET

HEXFET

®

Power MOSFET

Parameter Max. Units

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V 2.5

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V 2.0 A

I

DM

Pulsed Drain Current  20

P

D

@T

A

= 25°C Power Dissipation 2.5 W

Linear Derating Factor 0.02 W/°C

V

GS

Gate-to-Source Voltage ± 30 V

dv/dt Peak Diode Recovery dv/dt  11 V/ns

T

J

Operating Junction and -55 to + 150

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

Notes  through  are on page 8

SO-8

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

V

DSS

R

DS(on)

max I

D

200V 0.17W@V

GS

= 10V 2.5A

Symbol Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead ––– 20

R

θJA

Junction-to-Ambient  ––– 50 °C/W

Thermal Resistance

l High frequency DC-DC converters

Benefits

Applications

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

PD- 95306

l Lead-Free

IRF7450PbF

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

g

fs

Forward Transconductance 2.6 ––– ––– S V

DS

= 50V, I

D

= 1.5A

Q

g

Total Gate Charge ––– 26 39 I

D

= 1.5A

Q

gs

Gate-to-Source Charge ––– 6.0 9.0 nC V

DS

= 160V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 12 18 V

GS

= 10V,

t

d(on)

Turn-On Delay Time ––– 10 ––– V

DD

= 100V

t

r

Rise Time ––– 3.0 ––– I

D

= 1.5A

t

d(off)

Turn-Off Delay Time ––– 17 ––– R

G

= 6.0Ω

t

f

Fall Time ––– 18 ––– V

GS

= 10V 

C

iss

Input Capacitance ––– 940 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 160 ––– V

DS

= 25V

C

rss

Reverse Transfer Capacitance ––– 33 ––– pF ƒ = 1.0MHz

C

oss

Output Capacitance ––– 1100 ––– V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

C

oss

Output Capacitance ––– 66 ––– V

GS

= 0V, V

DS

= 160V, ƒ = 1.0MHz

C

oss

eff. Effective Output Capacitance ––– 25 ––– V

GS

= 0V, V

DS

= 0V to 160V 

Dynamic @ T

J

= 25°C (unless otherwise specified)

ns

Parameter Typ. Max. Units

E

AS

Single Pulse Avalanche Energy ––– 230 mJ

I

AR

Avalanche Current ––– 2.5 A

Avalanche Characteristics

S

D

G

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– 1.3 V T

J

= 25°C, I

S

= 1.5A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 97 146 ns T

J

= 25°C, I

F

= 1.5A

Q

rr

Reverse RecoveryCharge ––– 350 525 nC di/dt = 100A/µs



Diode Characteristics

2.3

20

A

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 200 ––– ––– V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

––– 0.26 ––– V/°C Reference to 25°C, I

D

= 1mA 

R

DS(on)

Static Drain-to-Source On-Resistance ––– ––– 0.17 Ω V

GS

= 10V, I

D

= 1.5A 

V

GS(th)

Gate Threshold Voltage 3.0 ––– 5.5 V V

DS

= V

GS

, I

D

= 250µA

––– ––– 25

µA

V

DS

= 200V, V

GS

= 0V

––– ––– 250 V

DS

= 160V, V

GS

= 0V, T

J

= 125°C

Gate-to-Source Forward Leakage ––– ––– 100 V

GS

= 30V

Gate-to-Source Reverse Leakage ––– ––– -100

nA

V

GS

= -30V

I

GSS

I

DSS

Drain-to-Source Leakage Current

IRF7450PbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

5.0V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

12V

10V

8.0V

7.0V

6.0V

5.5V

BOTTOM 5.0V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

5.0V

20µs PULSE WIDTH

Tj = 150°C

VGS

TOP 15V

12V

10V

8.0V

7.0V

6.0V

5.5V

BOTTOM 5.0V

0.1

1

10

100

5.0 5.5 6.0 6.5 7.0 7.5 8.0

V = 50V

20µs PULSE W IDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

2.5A

IRF7450TRPBF

IRF7450TRPBF

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