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MJE3055T

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12
1 Publication Order Number:
MJE2955T/D
MJE2955T (PNP),
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
• High Current Gain − Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
60 Vdc
Collector−Base Voltage V
CB
70 Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current I
C
10 Adc
Base Current I
B
6.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
(Note 1) 75
0.6
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.67 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
www.onsemi.com
MARKING DIAGRAM
MJExx55T = Device Code
xx = 29 or 30
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MJExx55TG
AY WW
Device Package Shipping
ORDERING INFORMATION
MJE2955TG TO−220
(Pb−Free)
50 Units / Rail
MJE3055TG TO−220
(Pb−Free)
50 Units / Rail
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
TO−220
CASE 221A−09
STYLE 1
1
2
3
4
MJE2955T (PNP), MJE3055T (NPN)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 200 mAdc, I
B
= 0)
V
CEO(sus)
60 −
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
I
CEO
− 700
mAdc
Collector Cutoff Current
(V
CE
= 70 Vdc, V
EB(off)
= 1.5 Vdc)
(V
CE
= 70 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150°C)
I
CEX
−
−
1.0
5.0
mAdc
Collector Cutoff Current
(V
CB
= 70 Vdc, I
E
= 0)
(V
CB
= 70 Vdc, I
E
= 0, T
C
= 150°C)
I
CBO
−
−
1.0
10
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
− 5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 4.0 Adc, V
CE
= 4 0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
20
5.0
100
−
−
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= 4.0 Adc, I
B
= 0.4 Adc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
V
CE(sat)
−
−
1.1
8.0
Vdc
Base−Emitter On Voltage (Note 2)
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
− 1.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f = 500 kHz)
f
T
2.0 −
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 20%.
MJE2955T (PNP), MJE3055T (NPN)
www.onsemi.com
3
10
5.0
Figure 1. Active−Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.2
0.1
20 30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
T
C
= 25°C (D = 0.1)
I
C
, COLLECTOR CURRENT (AMP)
dc
7.0 10
5.0 ms
1.0ms
50 60
0.5
7.0
3.0
0.7
0.3
T
J
= 150°C
100ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
J(pk)
= 150°C. T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
≤ 150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
0
T
C
, CASE TEMPERATURE (°C)
75 100 17525 50
Figure 2. DC Current Gain
125 150
500
0.01
Figure 3. Power Derating
I
C
, COLLECTOR CURRENT (AMP)
5.0
0.02 0.05 0.1 0.2 1.0 2.0 100.5
300
200
100
50
30
90
0
80
60
40
70
50
h
FE
, DC CURRENT GAIN
20
10
5.0
T
J
= 150°C
25°C
-55°C
V
CE
= 2.0 V
P
D
, POWER DISSIPATION (WATTS)
30
10
20
MJE3055T
MJE2955T
0.1
I
C
, COLLECTOR CURRENT (AMP)
0.5 1.0 100.2 0.3 2.0 3.0
Figure 4. “On” Voltages
2.0
0
1.6
1.2
0.8
V, VOLTAGE (VOLTS)
0.4
5.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 3.0 V
V
CE(sat)
@ I
C
/I
B
= 10
MJE2955T
0.1
I
C
, COLLECTOR CURRENT (AMP)
0.5 1.0 100.2 0.3 2.0 3.0
1.4
0
1.2
1.0
0.8
V, VOLTAGE (VOLTS)
0.4
5.0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
V
CE(sat)
@ I
C
/I
B
= 10
MJE3055T
0.6
0.2
P1-P3P4-P4

MJE3055T

Mfr. #:
Buy MJE3055T
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT NPN Gen Pur Switch
Lifecycle:
New from this manufacturer.
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