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SI3451DV-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 73701
S09-2277-Rev. C, 02-Nov-09
Vishay Siliconix
Si3451DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.20.0 0.2 0.4 0.6 0.8
V
SD
- Source-to-Drain Voltage (V)
)A( tnerruC ecruoS -I
S
1
10
0.1
T
A
= 150 °C
T
A
= 25 °C
0.6
0.7
0.8
0.9
1.0
1.1
1.2
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
V
)
ht(S
G
)
V(
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.04
0.12
0.20
0.28
0.36
12345
I
D
= 2.6 A
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
( ecnatsiseR-nO ecruoS-ot-niarD - )
T
A
= 125 °C
T
A
= 25 °C
0
8
2
4
)W
(
rewo
P
Time (s)
1 600 10
6
0.10.01
100
T
A
= 25 °C
Single Pulse
Safe Operating Area
100
1
0.1 1 10 100
0.001
10
T
A
= 25 °C
Single Pulse
)
A( tnerru
C
n
i
arD -I
D
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
0.01
10 ms
100 ms
DC
1 s
10 s
Limited by R
DS (on)
*
Document Number: 73701
S09-2277-Rev. C, 02-Nov-09
www.vishay.com
5
Vishay Siliconix
Si3451DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
0 25 50 75 100 125 150
I
D
)A( tnerruC niarD -
T
C
- Case Temperature (°C)
Power, Junction-to-Foot
0.0
0.5
1.0
1.5
.
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
r (W)ewoP
www.vishay.com
6
Document Number: 73701
S09-2277-Rev. C, 02-Nov-09
Vishay Siliconix
Si3451DV
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73701
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
110 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT ev
it
c
e
f
fE
de
zil
am
r
oN
ecnade
p
m
I
lam
r
e
h
T
Single Pulse
P1-P3P4-P6P7-P7

SI3451DV-T1-E3

Mfr. #:
Buy SI3451DV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI3443CDV-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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