APT50M75JLLU3 Datasheet APT50M75JLLU3 | P1-P3

APT50M75JLLU3

APT50M75JLLU3 – Rev 1 June, 2006

www.microsemi

.

com

1

–

8

ISOTOP



Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

A

S

G

D

S

ymbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 500 V

T

c

= 25°C 51

I

D

Continuo us Drain Current

T

c

= 80°C 39

I

DM

Pulsed Drain current 204

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 75

mΩ

P

D

Maximum Power Dissipation T

c

= 25°C 290 W

I

AR

Avalanche current (repetitive and non repetitive) 51 A

E

AR

Repetitive Avalanche Energy 50

E

AS

Single Pulse Avalanche Energy 2500

mJ

IF

AV

Maximum Average Forward Current Duty cycle=0.5 Tc = 80°C 30

IF

RMS

RMS Forward Current (Square wave, 50% duty) 39

A

V

DSS

= 500V

R

DSon

= 75mΩ max @ Tj = 25°C

I

D

= 51A @ Tc = 25°C

Applicatio

n

• AC and DC motor control

• Switched Mode Power Supplies

Fe ature s

• Power MOS 7

®

MOSFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

• ISOTOP

®

Package (SOT-227)

• Very low stray inductance

• High level of integration

Benefits

• Outsta ndi ng perfor mance at hi gh freq uenc y operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Very rugged

• Low profile

• RoHS Compliant

ISOTOP

®

Buck chopper

MOSFET Power Module

A

D

G

S

APT50M75JLLU3

APT50M75JLLU3 – Rev 1 June, 2006

www.microsemi

.

com

2

–

8

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 500V T

j

= 25°C 100

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 400V T

j

= 125°C 500

µA

R

DS(on)

Drain – Source on Resistance

V

GS

= 10V, I

D

= 25.5A 75

mΩ

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 1mA 3 5 V

I

GS S

Gate – Source Leakage Current V

GS

= ±20 V, V

DS

= 0V ±100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

is s

Input Capacitance 5590

C

oss

Output Capacitance 1180

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

85

pF

Q

g

Total gate Charge 123

Q

gs

Gate – Source Charge 33

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 250V

I

D

= 51A

65

nC

T

d(on)

Tur n-o n Delay Ti me 10

T

r

Rise Time 20

T

d(off)

Turn-off Delay Time 21

T

f

Fall Time

Resistive Switching

V

GS

= 15V

V

Bus

= 250V

I

D

= 51A

R

G

= 0.6Ω

5

ns

Eon Tur n-o n Switchi ng Energy 755

Eoff Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 15V, V

Bus

= 330V

I

D

= 51A,

R

G

= 5Ω

726

µJ

Eon Tur n-o n Switchi ng Energy 1241

Eoff Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 15V, V

Bus

= 330V

I

D

= 51A,

R

G

= 5Ω

846

µJ

APT50M75JLLU3

APT50M75JLLU3 – Rev 1 June, 2006

www.microsemi

.

com

3

–

8

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

F

= 30A 1.6 1.8

I

F

= 60A 1.9

V

F

Diode Forward Voltage

I

F

= 30A T

j

= 125°C 1.4

V

R

= 600V T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current

V

R

= 600V T

j

= 125°C 500

µA

C

T

Junction Capacitance V

R

= 200V 44 pF

Reverse Recovery Time

I

F

=1A,V

R

=30V

di/dt =100A/µs

T

j

= 25°C 23

T

j

= 25°C 85

t

rr

Reverse Recovery Time

T

j

= 125°C 160

ns

T

j

= 25°C 4

I

RRM

Maximum Reverse Recovery Current

T

j

= 125°C 8

A

T

j

= 25°C 130

Q

rr

Reverse Recovery Charge

I

F

= 30A

V

R

= 400V

di/dt =200A/µs

T

j

= 125°C 700

nC

t

rr

Reverse Recovery Time 70 ns

Q

rr

Reverse Recovery Charge 1300 nC

I

RRM

Maximum Reverse Recovery Current

I

F

= 30A

V

R

= 400V

di/dt =1000A/µs

T

j

= 125°C

30 A

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

MOSFET 0.27

R

thJC

Junction to Case Thermal Resistance

Diode 1.21

R

thJA

Junction to Ambient (IGBT & Diode) 20

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500 V

T

J

,T

STG

Storage Temperature Range -55 150

T

L

Max Lead Temp for Soldering:0.063” from case for 10 sec 300

°C

Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m

Wt Package Weight 29.2 g

Typical MOSFET Performance Curve

APT50M75JLLU3

APT50M75JLLU3

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