IS61LV5128AL-10TLI

Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
7
Rev. C
04/15/05
IS61LV5128AL ISSI
®
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(CE Controlled, OE = HIGH or LOW)
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
DATAIN VALID
t
LZWE
t
SD
CE_WR1.eps
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-10 -12
Symbol Parameter Min. Max. Min. Max. Unit
tWC Write Cycle Time 10 12 ns
tSCE CE to Write End 8 8 ns
tAW Address Setup Time 8 8 ns
to Write End
tHA Address Hold from Write End 0 0 ns
tSA Address Setup Time 0 0 ns
tPWE1 WE Pulse Width 8 8 ns
tPWE2 WE Pulse Width (OE = LOW) 10 12 ns
tSD Data Setup to Write End 6 6 ns
tHD Data Hold from Write End 0 0 ns
tHZWE
(2)
WE LOW to High-Z Output 5 6 ns
tLZWE
(2)
WE HIGH to Low-Z Output 2 2 ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are
referenced to the rising or falling edge of the signal that terminates the write.
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/15/05
IS61LV5128AL ISSI
®
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
2. I/O will assume the High-Z state if OE > V
IH.
DATA UNDEFINED
LOW
t WC
VALID ADDRESS
t PWE1
t AW
t HA
HIGH-Z
t HD
t SA
t HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t LZWE
t SD
CE_WR2.eps
WRITE CYCLE NO. 2
(1,2)
(WE Controlled: OE is HIGH During Write Cycle)
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
DATA UNDEFINED
t
WC
VALID ADDRESS
LOW
LOW
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
DIN
OE
DATA
IN
VALID
t
LZWE
t
SD
CE_WR3.eps
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
9
Rev. C
04/15/05
IS61LV5128AL ISSI
®
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
S
peed (ns) Order Part No. Package
10 IS61LV5128AL-10K 400-mil Plastic SOJ
10 IS61LV5128AL-10T TSOP (Type II)
12 IS61LV5128AL-12K 400-mil Plastic SOJ
12 IS61LV5128AL-12T TSOP (Type II)
Industrial Range: –40°C to +85°C
Sp
eed (ns) Order Part No. Package
10 IS61LV5128AL-10KI 400-mil Plastic SOJ
10 IS61LV5128AL-10KLI 400-mil Plastic SOJ, Lead-free
10 IS61LV5128AL-10TI TSOP (Type II)
10 IS61LV5128AL-10TLI TSOP (Type II), Lead-free
10 IS61LV5128AL-10BI mini BGA (8mmx10mm)
10 IS61LV5128AL-10BLI mini BGA (8mmx10mm), Lead-free
12 IS61LV5128AL-12TI TSOP (Type II)

IS61LV5128AL-10TLI

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 4Mb 512Kx8 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
Delivery:
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