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VS-STPS20L15D-N3

P1-P3P4-P6P7-P7
VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
1
Document Number: 94325
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 20 A
FEATURES
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
20 A
V
R
15 V
V
F
at I
F
See Electrical table
I
RM
max. 600 mA at 100 °C
T
J
max. 125 °C
Diode variation Single die
E
AS
10 mJ
Anode
1
3
Cathode
Base
cathode
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 20 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 700 A
V
F
19 A
pk
, T
J
= 125 °C (typical) 0.25 V
T
J
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS20L15DPbF VS-STPS20L15D-N3 UNITS
Maximum DC reverse voltage V
R
15 15 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle, T
C
= 85 °C, rectangular waveform 20 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
700
A
10 ms sine or 6 ms rect. pulse 330
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH 10 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A
VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
2
Document Number: 94325
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop
See fig. 1
V
FM
(1)
19 A
T
J
= 25 °C
-0.41
V
40 A - 0.52
19 A
T
J
= 125 °C
0.25 0.33
40 A 0.37 0.50
Reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
-10
mA
T
J
= 100 °C - 600
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.182 V
Forward slope resistance r
t
7.6 m:
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8 - nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 55 to 125
°C
Maximum storage temperature range T
Stg
- 55 to 150
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
1.5
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
(for TO-220)
0.50
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation
(for D
2
PAK)
40
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC STPS20L15D
VS-STPS20L15DPbF, VS-STPS20L15D-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
3
Document Number: 94325
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
1.60.4
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0 0.2 0.6 0.8 1.0
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
1.2 1.4
1000
0.1
1
10
100
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
15
12369
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1000
1000
010
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
51520
10 000
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1 10
0.01
Single pulse
(thermal resistance)
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
100
P1-P3P4-P6P7-P7

VS-STPS20L15D-N3

Mfr. #:
Buy VS-STPS20L15D-N3
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers Schottky - TO-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
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