Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set deadtime
High side output in phase with input
Also available LEAD-FREE
Typical Connection
Data Sheet No. PD60028-M
HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/- 200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.) 750 & 150 ns
Deadtime (typ.) 650 ns
www.irf.com 1
IR2111
(
S
)
&
(
PbF
)
V
CC
V
B
V
S
HO
LO
IN
COM
IN
up to 600V
TO
LOAD
V
CC
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
Description
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for half-
bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Internal deadtime is provided
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Packages
8-Lead PDIP 8-Lead SOIC
IR2111
(
S
) & (PbF)
2 www.irf.com
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
IN
Logic input voltage -0.3 V
CC
+ 0.3
dV
s
/dt Allowable offset supply voltage transient (figure 2) 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (8 Lead PDIP) 1.0
(8 lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient (8 lead PDIP) 125
(8 lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in figures 7 through 10.
V
W
°C/W
°C
Symbol Definition Min. Max. Units
V
B
High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 10 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage 0 V
CC
T
A
Ambient temperature -40 125
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
°C
V
IR2111
(
S
) & (PbF)
www.irf.com 3
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage for HO & logic “0” for LO 6.4 V
CC
= 10V
9.5 V
CC
= 15V
12.6 V
CC
= 20V
V
IL
Logic “0” input voltage for HO & logic “1” for LO 3.8 V
CC
= 10V
6.0 V
CC
= 15V
8.3 V
CC
= 20V
V
OH
High level output voltage, V
BIAS
- V
O
100 I
O
= 0A
V
OL
Low level output voltage, V
O
100 I
O
= 0A
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 50 100 V
IN
= 0V or V
CC
I
QCC
Quiescent V
CC
supply current 70 180 V
IN
= 0V or V
CC
I
IN+
Logic “1” input bias current 30 50 V
IN
= V
CC
I
IN-
Logic “0” input bias current 1.0 V
IN
= 0V
V
BSUV+
V
BS
supply undervoltage positive going threshold 7.6 8.6 9.6
V
BSUV-
V
BS
supply undervoltage negative going threshold 7.2 8.2 9.2
V
CCUV+
V
CC
supply undervoltage positive going threshold 7.6 8.6 9.6
V
CCUV-
V
CC
supply undervoltage negative going threshold 7.2 8.2 9.2
I
O+
Output high short circuit pulsed current 200 250 V
O
= 0V, V
IN
= V
CC
PW10 µs
I
O-
Output low short circuit pulsed current 420 500 V
O
= 15V, V
IN
= 0V
PW10 µs
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
mV
mA
V
V
µA
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 550 750 950 V
S
= 0V
t
off
Turn-off propagation delay 150 180 V
S
= 600V
t
r
Turn-on rise time 80 130
t
f
Turn-off fall time 40 65
DT Deadtime, LS turn-off to HS turn-on & 480 650 820
HS turn-off to LS turn-on
MT Delay matching, HS & LS turn-on/off 30
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in figure 3.
ns

IR2111STRPBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
Gate Drivers HALF BRDG DRVR 600V 650ns 200mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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