OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MBRB2545CT-E3/45

P1-P3P4-P5
Document Number: 88675 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Jun-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Dual Common-Cathode Schottky Rectifier
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB
package)
• Complant to RoHS 2002/95/EC and in accordance to
WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test, HE3 suffix for high reliability grade (AEC-Q101
qualified), meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 12.5 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.73 V at 30 A, 0.65 V at 15 A
T
J
max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25xxCT
ITO-220AB
MBRF25xxCT
MBRB25xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
TO-263AB
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 50 60
VWorking peak reverse voltage V
RWM
35 45 50 60
Maximum DC blocking voltage V
DC
35 45 50 60
Maximum average forward rectified current
at T
C
= 130 °C
total device
I
F(AV)
25
A
per diode 12.5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150
A
Peak repetitive reverse surge current per diode
at t
p
= 2 μs, 1 kHz
I
RRM
1.0 0.5
Peak non-repetitive reverse energy (8/20 μs waveform)
per diode
E
RSM
25 mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 kΩ
V
C
25 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88675
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Jun-10
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
Operating junction temperature range T
J
- 65 to + 150
°C
Storage temperature range T
STG
- 65 to + 175
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
Maximum instantaneous
forward voltage per diode
I
F
= 15 A
T
C
= 25 °C
V
F
(1)
-0.75
V
T
C
= 125 °C - 0.65
I
F
= 30 A
T
C
= 25 °C 0.82 -
T
C
= 125 °C 0.73 -
Maximum instantaneous
reverse current at blocking
voltage per diode
T
C
= 25 °C
I
R
(1)
0.2 1.0
mA
T
C
= 125 °C 40 50
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance from junction to case per diode R
θJC
1.5 4.5 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR2545CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF2545CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB2545CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB2545CT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB MBR2545CT-E3/4W 1.85 4W 50/tube Tube
TO-220AB MBR2545CTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AB MBRF2545CTHE3/45
(1)
1.99 45 50/tube Tube
TO-263AB MBRB2545CTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB MBRB2545CTHE3/81
(1)
1.35 81 800/reel Tape and reel
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR2535CT MBR2545CT MBR2550CT MBR2560CT UNIT
Document Number: 88675 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Jun-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
6
18
12
30
0
50
100
150
24
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
0
25
75
50
125
100
150
1 100
10
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
100
10
1.0
0.1
0.01
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
0 0.20.1 0.5 1.00.40.3 0.6 0.7 0.8 0.9
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
1
10
100
0.01
0.001
0.1
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
200 10040 60 80
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
101
100
1000
10 000
100
0.1
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
0.01
101
100
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBRB2545CT-E3/45

Mfr. #:
Buy MBRB2545CT-E3/45
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 25 Amp 45 Volt Dual
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet