IRLU8113PBF Datasheet IRLR8113TRRPBF, IRLU8113PBF, IRLR8113PBF | P1-P3

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12/7/04

IRLR8113PbF

IRLU8113PbF

HEXFET

®

Power MOSFET

Notes  through  are on page 11

Applications

Benefits

l Very Low R

DS

(on) at 4.5V V

GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l Lead-Free

D-Pak

IRLR8113

I-Pak

IRLU8113

PD - 95779A

V

DSS

R

DS(on)

max

Qg

30V

6.0m

22nC

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C

Maximum Power Dissipation W

P

D

@T

C

= 100°C

Maximum Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JC

Junction-to-Case ––– 1.69

R

θ

JA

Junction-to-Ambient (PCB Mount)

––– 50 °C/W

R

θ

JA

Junction-to-Ambient ––– 110

89

0.59

44

Max.

94

67

380

± 20

30

300 (1.6mm from case)

-55 to + 175

10 lbf

in (1.1 N m)

IRLR/U8113PbF

2 www.irf.com

S

D

G

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V

∆Β

V

DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 4.8 6.0

m

Ω

––– 5.8 7.4

V

GS(th)

Gate Threshold Voltage 1.35 ––– 2.25 V

∆

V

GS(th)

/

∆

T

J

Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– 1.0 µA

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 74 ––– ––– S

Q

g

Total Gate Charge ––– 22 32

Q

gs1

Pre-Vth Gate-to-Source Charge ––– 6.1 –––

Q

gs2

Post-Vth Gate-to-Source Charge ––– 1.7 ––– nC

Q

gd

Gate-to-Drain Charge ––– 6.8 –––

Q

godr

Gate Charge Overdrive ––– 7.4 ––– See Fig. 16

Q

sw

Switch Charge (Q

gs2

+ Q

gd

)

––– 8.5 –––

Q

oss

Output Charge ––– 14 ––– nC

t

d(on)

Turn-On Delay Time ––– 9.2 –––

t

r

Rise Time ––– 3.8 –––

t

d(off)

Turn-Off Delay Time ––– 15 ––– ns

t

f

Fall Time ––– 10 –––

C

iss

Input Capacitance ––– 2920 –––

C

oss

Output Capacitance ––– 610 ––– pF

C

rss

Reverse Transfer Capacitance ––– 260 –––

Avalanche Characteristics

Parameter Units

E

AS

Single Pulse Avalanche Energy

mJ

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– –––

94

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 380

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.0 V

t

rr

Reverse Recovery Time ––– 33 49 ns

Q

rr

Reverse Recovery Charge ––– 30 45 nC

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

GS

= 20V

V

GS

= -20V

Conditions

8.9

Max.

145

13

ƒ = 1.0MHz

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 15A

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 24V, V

GS

= 0V

V

DS

= 24V, V

GS

= 0V, T

J

= 175°C

Clamped Inductive Load

V

DS

= 15V, I

D

= 12A

V

DS

= 16V, V

GS

= 0V

V

DD

= 15V, V

GS

= 4.5V

I

D

= 12A

V

DS

= 15V

T

J

= 25°C, I

F

= 12A, V

DD

= 15V

di/dt = 100A/µs

T

J

= 25°C, I

S

= 12A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

MOSFET symbol

V

GS

= 4.5V, I

D

= 12A

–––

V

GS

= 4.5V

Typ.

–––

I

D

= 12A

V

GS

= 0V

V

DS

= 15V

IRLR/U8113PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

2 3 4 5 6 7 8

V

GS

, Gate-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 15V

20µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T

J

, Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 30A

V

GS

= 10V

IRLU8113PBF

IRLU8113PBF

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