VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
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Vishay Semiconductors
Revision: 09-Jul-15
1
Document Number: 94023
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC
®
-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins),
TO-247AC
I
F(AV)
60 A
V
R
600 V
V
F
at I
F
1.11 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Diode variation Single die
TO-247AC modified
TO-247AC
Cathode
to base
2
1
3
Cathode
Anode
VS-60EPU06PbF
Cathode
to base
2
Anode Anode
VS-60APU06PbF
VS-60EPU06-N3 VS-60APU06-N3
1
3
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
600 V
Continuous forward current I
F(AV)
T
C
= 116 °C 60
ASingle pulse forward current I
FSM
T
C
= 25 °C 600
Maximum repetitive forward current I
FRM
Square wave, 20 kHz 120
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 60 A - 1.35 1.68
I
F
= 60 A, T
J
= 125 °C - 1.20 1.42
I
F
= 60 A, T
J
= 175 °C - 1.11 1.30
Reverse leakage current I
R
V
R
= V
R
rated - - 50
μA
T
J
= 150 °C, V
R
= V
R
rated - - 500
Junction capacitance C
T
V
R
= 600 V - 39 - pF
