TEPT5600

TEPT5600
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 26-Nov-14
1
Document Number: 84768
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ambient Light Sensor
DESCRIPTION
TEPT5600 ambient light sensor is a silicon NPN epitaxial
planar phototransistor in a T-1¾ package. It is sensitive to
visible light much like the human eye and has peak
sensitivity at 570 nm.
FEATURES
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
High photo sensitivity
Adapted to human eye responsivity
Angle of half sensitivity: ϕ = ± 20°
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Replacement of cadmium sulfide (CdS) photoresistors
Ambient light sensor
Note
Test condition see table “Basic Characteristics
Note
MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT I
PCE
(μA) ϕ (deg) λ
0.5
(nm)
TEPT5600 630 ± 20 440 to 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEPT5600 Bulk
MOQ: 4000 pcs, 4000 pcs/bulk. Label with I
PCE
group on each bulk.
Specifications of group A/B/C/D see table “Type Dedicated Characteristics”
T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
6V
Emitter collector voltage V
ECO
1.5 V
Collector current I
C
20 mA
Power dissipation T
amb
55 °C P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature t 3 s, 2 mm distance to package T
sd
260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
thJA
230 K/W
TEPT5600
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 26-Nov-14
2
Document Number: 84768
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Note
Each 4000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot
be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly.
0
20
40
60
80
100
120
0 102030405060708090100
21333
R
thJA
= 230 K/W
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 0.1 mA V
CEO
6V
Collector dark current V
CE
= 5 V, E = 0 I
CEO
350nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CEO
16 pF
Photo current
E
v
= 20 lx, CIE illuminant A,
V
CE
= 5 V
I
PCE
25 226.8 μA
E
v
= 100 lx, CIE illuminant A,
V
CE
= 5 V
I
PCE
630 μA
Angle of half sensitivity ϕ ± 20 deg
Wavelength of peak sensitivity λ
p
570 nm
Range of spectral bandwidth λ
0.5
440 to 800 nm
TYPE DEDICATED CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION BINNED GROUP SYMBOL MIN. MAX. UNIT
Photo current
E
V
= 20 lx,
CIE illuminant A,
V
CE
= 5 V, T
amb
= 25 °C
AI
PCE
25 50.4 μA
BI
PCE
41.7 84 μA
CI
PCE
69.4 140 μA
DI
PCE
113.4 226.8 μA
TEPT5600
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 26-Nov-14
3
Document Number: 84768
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Photo Current vs. Ambient Temperature
Fig. 4 - Photo Current vs. Collector Emitter Voltage
Fig. 5 - Photo Current vs. Illuminance
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
19758
100
806040200-20-40
T - Ambient Temperature (°C)
amb
I - Collector Dark Current (A)
CEO
10
10
-6
-7
10
-8
10
-9
10
-10
10
-11
10
-12
10
-13
V
CE
= 5 V
19759
100806040200-20-40
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I
PCE rel
- Relative Photo Current
T
amb
- Ambient Temperature (°C)
V
CE
= 5 V, white LED
20205
0
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
I
PCE
- Photo Current (µA)
V
CE
- Collector Emitter Voltage (V)
200 lx
100 lx
50 lx
20 lx
1
2
543
20204
E
V
- Illuminance (lx)
I
PCE
- Photo Current (µA)
1000
10010
10 000
1000
100
10
19762
f = 1 MHz
C
CE0
- Collector Emitter Capacitance (pF)
V
CE
- Collector Emitter Voltage (V)
25
20
15
10
5
0
0.1 1.0 10.0
20019
0.0
0.1
0.2
0.3
0.4
0.5
300 400 500 600 700 800 900 1000 1100
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.6
0.7
0.8
0.9
1.0

TEPT5600

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Ambient Light Sensors Ambient Light Sensor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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