NLVVHC1GT04DTT1G

© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 0
1 Publication Order Number:
NLVVHC1GT04/D
NLVVHC1GT04
Inverting Buffer /
CMOS Logic Level Shifter
LSTTL−Compatible Inputs
The NLVVHC1GT04 is a single gate inverting buffer fabricated
with silicon gate CMOS technology. It achieves high speed operation
similar to equivalent Bipolar Schottky TTL while maintaining CMOS
low power dissipation.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The device input is compatible with TTL−type input thresholds and
the output has a full 5 V CMOS level output swing. The input protection
circuitry on this device allows overvoltage tolerance on the input,
allowing the device to be used as a logic−level translator from 3 V
CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V
CMOS Logic while operating at the high−voltage power supply.
The NLVVHC1GT04 input structure provides protection when
voltages up to 7.0 V are applied, regardless of the supply voltage. This
allows the NLVVHC1GT04 to be used to interface 5 V circuits to 3 V
circuits. The output structures also provide protection when V
CC
=
0 V. These input and output structures help prevent device destruction
caused by supply voltage − input/output voltage mismatch, battery
backup, hot insertion, etc.
Features
High Speed: t
PD
= 3.8 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
TTL−Compatible Inputs: V
IL
= 0.8 V; V
IH
= 2 V
CMOS−Compatible Outputs: V
OH
> 0.8 V
CC
; V
OL
< 0.1 V
CC
@ Load
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 105; Equivalent Gates = 26
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
IN A
OUT Y
1
V
CC
NC
IN A
OUT Y
GND
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
1
2
34
5
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MARKING
DIAGRAMS
SC−88A
DF SUFFIX
CASE 419A
TSOP−5
DT SUFFIX
CASE 483
1
1
5
5
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5V
CC
OUT Y
FUNCTION TABLE
L
H
A Input Y Output
H
L
1
5
VK M G
G
VK = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
1
5
VK M G
G
M
NLVVHC1GT04
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2
MAXIMUM RATINGS
Symbol Characteristics Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage V
CC
= 0
High or Low State
−0.5 to 7.0
−0.5 to V
CC
+ 0.5
V
I
IK
Input Diode Current −20 mA
I
OK
Output Diode Current V
OUT
< GND; V
OUT
> V
CC
+20 mA
I
OUT
DC Output Current, per Pin +25 mA
I
CC
DC Supply Current, V
CC
and GND +50 mA
P
D
Power dissipation in still air SC−88A, TSOP−5 200 mW
q
JA
Thermal resistance SC−88A, TSOP−5 333
_C/W
T
L
Lead temperature, 1 mm from case for 10 s 260 °C
T
J
Junction temperature under bias +150 °C
T
stg
Storage temperature −65 to +150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
> 2000
> 400
N/A
V
I
Latchup
Latchup Performance Above V
CC
and Below GND at 125°C (Note 4) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 3.0 5.5 V
V
IN
DC Input Voltage 0.0 5.5 V
V
OUT
DC Output Voltage V
CC
= 0
High or Low State
0.0
0.0
5.5
V
CC
V
T
A
Operating Temperature Range −55 +125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NLVVHC1GT04
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3
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Test Conditions
V
CC
(V)
T
A
= 25°C T
A
85°C −55 T
A
125°C
Unit
Min Typ Max Min Max Min Max
V
IH
Minimum High−Level
Input Voltage
3.0
4.5
5.5
1.4
2.0
2.0
1.4
2.0
2.0
1.4
2.0
2.0
V
V
IL
Maximum Low−Level
Input Voltage
3.0
4.5
5.5
0.53
0.8
0.8
0.53
0.8
0.8
0.53
0.8
0.8
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
3.0
4.5
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4.0 mA
I
OL
= 8.0 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 5.5 1.0 20 40
mA
I
CCT
Quiescent Supply
Current
Input: V
IN
= 3.4 V 5.5 1.35 1.50 1.65 mA
I
OPD
Output Leakage
Current
V
OUT
= 5.5 V 0.0 0.5 5.0 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns
Symbo
l
Parameter Test Conditions
T
A
= 25°C T
A
85°C −55 T
A
125°C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Maximum Propagation
Delay, Input A to Y
V
CC
= 3.3 ± 0.3 V C
L
= 15 pF
C
L
= 50 pF
5.0
6.2
10.0
13.5
11.0
15.0
13.0
17.5
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15 pF
C
L
= 50 pF
3.8
4.2
6.7
7.7
7.5
8.5
8.5
9.5
C
IN
Maximum Input
Capacitance
5.0 10 10 10 pF
C
PD
Power Dissipation Capacitance (Note 5)
Typical @ 25°C, V
CC
= 5.0 V
pF
10
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.

NLVVHC1GT04DTT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Inverters LOG CMOS INVERTER GA
Lifecycle:
New from this manufacturer.
Delivery:
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