IXGH10N100AU1 Datasheet IXGH10N100U1, IXGH10N100AU1 | P1-P3

TO-247 AD

G

C

E

G = Gate, C = Collector,

E = Emitter, TAB = Collector

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 1000 V

V

CGR

T

J

= 25°C to 150°C; R

GE

= 1 MΩ 1000 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C20A

I

C90

T

C

= 90°C10A

I

CM

T

C

= 25°C, 1 ms 40 A

SSOA V

GE

= 15 V, T

VJ

= 125°C, R

G

= 150 Ω I

CM

= 20 A

(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V

CES

P

C

T

C

= 25°C 100 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting torque (M3) 1.13/10 Nm/lb.in.

Weight 6g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

BV

CES

I

C

= 4 mA, V

GE

= 0 V 1000 V

V

GE(th)

I

C

= 500 µA, V

CE

= V

GE

2.5 5.5 V

I

CES

V

CE

= 0.8 • V

CES

T

J

= 25°C 400 µA

V

GE

= 0 V T

J

= 125°C5mA

I

GES

V

CE

= 0 V, V

GE

= ±20 V ±100 nA

V

CE(sat)

I

C

= I

C90

, V

GE

= 15 V 10N100U1 3.5 V

10N100AU1 4.0 V

V

CES

I

C25

V

CE(sat)

Low V

CE(sat)

IGBT with Diode IXGH 10 N100U1 1000 V 20 A 3.5 V

High speed IGBT with Diode IXGH

10 N100AU1 1000 V 20 A 4.0 V

Combi Packs

Features

l

International standard package

JEDEC TO-247 AD

l

IGBT and anti-parallel FRED in one

package

l

2nd generation HDMOS

TM

process

l

Low V

CE(sat)

- for low on-state conduction losses

l

MOS Gate turn-on

- drive simplicity

l

Fast Recovery Epitaxial Diode (FRED)

- soft recovery with low I

RM

Applications

l

AC motor speed control

l

DC servo and robot drives

l

DC choppers

l

Uninterruptible power supplies (UPS)

l

Switch-mode and resonant-mode

power supplies

Advantages

l

Space savings (two devices in one

package)

l

Easy to mount with 1 screw

(isolated mounting screw hole)

l

Reduces assembly time and cost

91753F (3/97)

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 10N100U1

IXGH 10N100AU1

TO-247 AD Outline

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

I

C

= I

C90

; V

CE

= 10 V, 4 8 S

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C

ies

750 pF

C

oes

V

CE

= 25 V, V

GE

= 0 V, f = 1 MHz 200 pF

C

res

30 pF

Q

g

52 70 nC

Q

ge

I

C

= I

C90

, V

GE

= 15 V, V

CE

= 0.5 V

CES

13 25 nC

Q

gc

24 45 nC

t

d(on)

100 ns

t

ri

200 ns

t

d(off)

550 900 ns

t

fi

10N100U1 800 ns

10N100AU1 500 ns

E

off

10N100AU1 2 3 mJ

t

d(on)

100 ns

t

ri

200 ns

E

on

1.1 mJ

t

d(off)

600 1000 ns

t

fi

10N100U1 1250 2000 ns

10N100AU1 600 1000 ns

E

off

10N100U1 5.0 mJ

10N100AU1 2.5 mJ

R

thJC

1.2 K/W

R

thCK

0.25 K/W

Reverse Diode (FRED) Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

F

= I

C90

, V

GE

= 0 V, 2.75 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

I

RM

I

F

= I

C90

, V

GE

= 0 V, -di

F

/dt = 100 A/µs 6.5 A

t

rr

V

R

= 540 V T

J

=125°C 120 ns

I

F

= 1 A; -di/dt = 50 A/µs; V

R

= 30 V T

J

=25°C50 60ns

R

thJC

1.6 K/W

Inductive load, T

J

= 125

°°

°C

I

C

= I

C90

, V

GE

= 15 V, L = 300 µH

V

CE

= 0.8 V

CES

, R

G

= R

off

= 150 Ω

Remarks: Switching times

may increase

for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

Inductive load, T

J

= 25

°°

°C

I

C

= I

C90

, V

GE

= 15 V, L = 300 µH,

V

CE

= 0.8 V

CES

, R

G

= R

off

= 150 Ω

Remarks: Switching times

may increase

for V

CE

(Clamp) > 0.8 • V

CES

,

higher T

J

or increased R

G

1 = Gate

2 = Collector

3 = Emitter

Tab = Collector

IXGH 10N100U1

IXGH 10N100AU1

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

BV / V

(th)

- Normalized

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

V

(sat)

- Normalized

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

V

CE

- Volts

012345

I

C

- Amperes

0

2

4

6

8

10

12

14

16

18

20

T

J

= 25°C V

GE

= 15V

7V

9V

11V

V

GE

- Volts

56789101112131415

V

CE

- Volts

0

1

2

3

4

5

6

7

8

9

10

V

GE

- Volts

012345678910

I

C

- Amperes

0

2

4

6

8

10

12

14

16

18

20

V

CE

- Volts

0 2 4 6 8 10 12 14 16 18 20

I

C

- Amperes

0

10

20

30

40

50

60

70

80

13V

11V

9V

7V

13V

T

J

= 25°C

V

GE

= 15V

I

C

= 5A

I

C

= 10A

I

C

= 20A

V

GE

= 15V

I

C

= 5A

I

C

= 10A

V

CE

= 10V

T

J

= 125°C

T

J

= 25°C

T

J

= - 40°C

V

GE(th)

I

C

= 250µA

BV

CES

I

C

= 3mA

10N100p1.JNB

T

J

= 25°C

I

C

= 20A

Fig. 3 Collector-Emitter Voltage Fig. 4 Temperature Dependence

vs. Gate-Emitter Voltage of Output Saturation Voltage

Fig. 5 Input Admittance Fig. 6 Temperature Dependence of

Breakdown and Threshold Voltage

Fig. 1 Saturation Characteristics Fig. 2 Output Characterstics

IXGH10N100AU1

IXGH10N100AU1

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