TS861, TS862, TS864 Electrical characteristics
Doc ID 6422 Rev 3 5/19
Note: Limits are 100% production tested at 25 °C. Limits over temperature are guaranteed through
correlation and by design.
Table 4. Electrical characteristics at V
CC
= 5 V, T
amb
= 25 °C
(unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
IO
Input offset voltage
TS861/2/4
T
min
< T < T
max
TS861/2/4A
T
min
< T < T
max
3
3
15
18
7
10
mV
ΔV
IO
Input offset voltage drift 6 μV/°C
I
IO
Input offset current
(1)
T
min
< T < T
max
1. Maximum values including unavoidable inaccuracies of the industrial test.
1 150
300
pA
I
IB
Input bias current
(1)
T
min
< T < T
max
1 300
600
pA
V
OH
High level output voltage
I
SOURCE
=5mA
T
min
< T < T
max
4.6
4.45
4.8
V
V
OL
Low level output voltage
I
SINK
=5mA
T
min
< T < T
max
0.2 0.4
0.55
V
A
VD
Large signal voltage gain
(2)
2. Design evaluation.
240 dB
CMR
Common mode rejection ratio
0 < V
ICM
< 5 V 70
dB
SVR
Supply voltage rejection ratio
2.7 < V
CC
< 10 V 80
dB
I
CC
Supply current per comparator
No load, output low
No load, output high
6
8
12
14
μA
T
PLH
Propagation delay from output low to output high
V
ICM
= 2.5 V, f = 10 kHz, C
L
=50pF
Overdrive = 10 mV
Overdrive = 100 mV
2
0.5
µs
T
PHL
Propagation delay from output high to output low
V
ICM
= 2.5 V, f = 10 kHz, C
L
=50pF
Overdrive = 10 mV
Overdrive = 100 mV
2
0.4
µs
T
F
Fall time
f=10kHz, C
L
= 50 pF, overdrive = 100 mV 20 ns
T
R
Rise time
f=10kHz, C
L
= 50 pF, overdrive = 100 mV 20 ns
