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MBR1650-E3/45

P1-P3P4-P5
MBRF16xx, MBRB16xx
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
1
Document Number: 88671
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Barrier Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: ITO-220AC, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
16 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.57 V, 0.65 V
T
J
max. 150 °C
Package ITO-220AC, D
2
PAK (TO-263AB)
Diode variations Single
ITO-220AC
MBRF16xx
MBRB16xx
PIN 1
PIN 2
K
HEATSINK
1
2
K
PIN 2
PIN 1
1
2
D
2
PAK (TO-263AB)
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRB1635 MBRB1645 MBRB1660 UNIT
Maximum repetitive peak reverse voltage V
RRM
35 45 60
VWorking peak reverse voltage V
RWM
35 45 60
Maximum DC blocking voltage V
DC
35 45 60
Maximum average forward rectified current at T
C
= 125 °C I
F(AV)
16
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150
Peak repetitive reverse current at t
p
= 2.0 µs, 1 kHz I
RRM
1.0 0.5
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-65 to +150
°C
Storage temperature range T
STG
-65 to +175
Isolation voltage (ITO-220AC only) from terminal to heatsink
t = 1 min
V
AC
1500 V
MBRF16xx, MBRB16xx
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
2
Document Number: 88671
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 40 ms
Note
(1)
AEC-Q101 qualified
(2)
60 V available in D
2
PAK (TO-263AB) package only
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MBRB1635 MBRB1645 MBRB1660 UNIT
Maximum instantaneous forward voltage V
F
(1)
I
F
= 16 A T
C
= 25 °C 0.63 0.75
V
I
F
= 16 A T
C
= 125 °C 0.57 0.65
Maximum instantaneous reverse current
at DC blocking voltage
I
R
(1)
Rated V
R
T
C
= 25 °C 0.2 1.0
mA
T
C
= 125 °C 40 50
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF MBRB UNIT
Typical thermal resistance from junction to case R
JC
3.0 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AC MBRF1645-E3/45 1.94 45 50/tube Tube
TO-263AB MBRB1645-E3/45
(2)
1.33 45 50/tube Tube
TO-263AB MBRB1645-E3/81
(2)
1.33 81 800/reel Tape and reel
ITO-220AC MBRF1645HE3/45
(1)
1.94 45 50/tube Tube
TO-263AB MBRB1645HE3_A/P
(1)(2)
1.33 P 50/tube Tube
TO-263AB MBRB1645HE3_A/I
(1)(2)
1.33 I 800/reel Tape and reel
MBRF16xx, MBRB16xx
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
3
Document Number: 88671
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
C
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
50
100
150
0
4
8
12
16
20
Resistive or Inductive Load
Average Forward Cu
rrent (A)
Case Temperature (°C)
1
10
100
0
25
50
75
100
125
150
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
T
J
= 150 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
MBRB1635, MBRB1645
MBRB1660
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
MBRB1635, MBRB1645
MBRB1660
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
0.1
1
10
100
100
1000
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Reverse Voltage (V)
Junction Capacitance (pF)
MBR1635, MBR1645
MBR1660
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

MBR1650-E3/45

Mfr. #:
Buy MBR1650-E3/45
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 50 Volt 16A Single 150 Amp IFSM
Lifecycle:
New from this manufacturer.
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