SUP60N10-16L-E3 Datasheet SUP60N10-16L-E3 | P1-P3

FEATURES

D TrenchFETr Power MOSFET

D 175_C Junction Temperature

D PWM Optimized

APPLICATIONS

D DC/DC Primary Side Switch

SUP60N10-16L

Vishay Siliconix

Document Number: 71928

S-03600—Rev. B, 31-Mar-03

www.vishay.com

1

N-Channel 100-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V

(BR)DSS

(V) r

DS(on)

(W) I

D

(A)

100

0.016 @ V

GS

= 10 V 60

100

0.018 @ V

GS

= 4.5 V 56

D

G

S

N-Channel MOSFET

TO-220AB

Top View

GDS

DRAIN connected to TAB

SUP60N10-16L

ABSOLUTE MAXIMUM RATINGS (T

C

= 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

100

Gate-Source Voltage V

GS

"20

V

Continuous Drain Current (T

J

= 175

_

C)

T

C

= 25_C

I

D

60

Continuous Drain Current (T

J

= 175_C)

T

C

= 125_C

I

D

35

A

Pulsed Drain Current I

DM

100

A

Avalanche Current I

AR

40

Repetitive Avalanche Energy

a

L = 0.1 mH E

AR

80 mJ

Maximum Power Dissipation

a

T

C

= 25_C P

D

150

b

W

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to 175 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient (Free Air) R

thJA

62.5

_C/W

Junction-to-Case R

thJC

1.0

_C/W

Notes

a. Duty cycle v 1%.

b. See SOA curve for voltage derating.

c. When mounted on 1” square PCB (FR-4 material).

SUP60N10-16L

Vishay Siliconix

www.vishay.com

2

Document Number: 71928

S-03600—Rev. B, 31-Mar-03

SPECIFICATIONS (T

J

=25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

(BR)DSS

V

GS

= 0 V, I

D

= 250 mA 100

V

Gate-Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 mA 1 3

V

Gate-Body Leakage I

GSS

V

DS

= 0 V, V

GS

= "20 V

"100 nA

V

DS

= 80 V, V

GS

= 0 V 1

Zero Gate Voltage Drain Current I

DSS

V

DS

= 80 V, V

GS

= 0 V, T

J

= 125_C 50

mA

g

DSS

V

DS

= 80 V, V

GS

= 0 V, T

J

= 175_C 250

m

On-State Drain Current

a

I

D(on)

V

DS

w 5 V, V

GS

= 10 V 100 A

V

GS

= 10 V, I

D

= 30 A 0.0125 0.016

Drain

-

Source On

-

State Resistance

a

r

DS(on)

V

GS

= 4.5 V, I

D

= 20 A

0.014 0.018

W

D

ra

i

n-

S

ource

O

n-

St

a

t

e

R

es

i

s

t

ance

a

r

DS(on)

V

GS

= 10 V, I

D

= 30 A, T

J

= 125_C 0.030

W

V

GS

= 10 V, I

D

= 30 A, T

J

= 175_C 0.040

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 30 A 25 S

Dynamic

b

Input Capacitance C

iss

3820

Output Capacitance C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz

450 pF

Reverse Transfer Capacitance C

rss

210

Total Gate Charge

c

Q

g

73 110

Gate-Source Charge

c

Q

gs

V

DS

= 50 V, V

GS

= 10 V, I

D

= 60 A

15

nC

Gate-Drain Charge

c

Q

gd

DS

,

GS

,

D

20

Gate Resistance R

G

1.5 W

Turn-On Delay Time

c

t

d(on)

12 25

Rise Time

c

t

r

V

DD

= 50 V, R

L

= 0.83 W

90 135

ns

Turn-Off Delay Time

c

t

d(off)

V

DD

= 50 V

,

R

L

= 0

.

83 W

I

D

^ 60 A, V

GEN

= 10 V, R

G

= 2.5 W

55 85

ns

Fall Time

c

t

f

130 195

Source-Drain Diode Ratings and Characteristics (T

C

= 25_C)

b

Continuous Current I

S

60

A

Pulsed Current I

SM

100

A

Forward Voltage

a

V

SD

I

F

= 60 A, V

GS

= 0 V

1.0 1.5 V

Reverse Recovery Time t

rr

62 100 ns

Peak Reverse Recovery Current I

RM(REC)

I

F

= 50 A, di/dt = 100 A/ms

3.1 5 A

Reverse Recovery Charge Q

rr

F

, m

0.10 0.25 mC

Notes

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

SUP60N10-16L

Vishay Siliconix

Document Number: 71928

S-03600—Rev. B, 31-Mar-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

1000

2000

3000

4000

5000

6000

0 20406080100

0

2

4

6

8

10

0 1020304050607080

0

40

80

120

160

0 102030405060708090

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0 20406080100

0

20

40

60

80

100

120

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

30

60

90

120

0246810

Output Characteristics Transfer Characteristics

Capacitance Gate Charge

Transconductance On-Resistance vs. Drain Current

V

DS

- Drain-to-Source Voltage (V) V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

V

GS

- Transconductance (S)g

fs

25_C

-55_C

3 V

T

C

= 125_C

V

DS

= 50 V

I

D

= 60 A

V

GS

= 10 thru 6 V

V

GS

= 10 V

C

iss

C

oss

T

C

= -55_C

25_C

125_C

4 V

V

GS

= 4.5 V

- On-Resistance (r

DS(on)

W )

- Drain Current (A)I

D

I

D

- Drain Current (A)

5 V

C

rss

SUP60N10-16L-E3

SUP60N10-16L-E3

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