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BAT54XV2T1

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2003
August, 2003 − Rev. 1
1 Publication Order Number:
BAT54XV2T1/D
BAT54XV2T1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance Junction to Ambient R
JA
635 °C/W
Junction and Storage Temperature T
J
, T
stg
150 °C
1. FR−4 Minimum Pad
30 VOLT SILICON
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
Device Package Shipping
ORDERING INFORMATION
BAT54XV2T1 SOD−523 3000/Tape & Reel
PLASTIC
SOD−523
CASE 502
1
Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE
2
ANODE
MARKING
DIAGRAM
http://onsemi.com
JV
d
JV = Specific Device Code
d = Date Code
BAT54XV2T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage (I
R
= 10 A) V
(BR)R
30 − − Volts
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz) C
T
− 7.6 10 pF
Reverse Leakage (V
R
= 25 V) I
R
− 0.5 2.0 Adc
Forward Voltage (I
F
= 0.1 mAdc) V
F
− 0.22 0.24 Vdc
Forward Voltage (I
F
= 30 mAdc) V
F
− 0.41 0.5 Vdc
Forward Voltage (I
F
= 100 mAdc) V
F
− 0.52 0.8 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
t
rr
− − 5.0 ns
Forward Voltage (I
F
= 1.0 mAdc) V
F
− 0.29 0.32 Vdc
Forward Voltage (I
F
= 10 mAdc) V
F
− 0.35 0.40 Vdc
Forward Current (DC) I
F
− − 200 mAdc
Repetitive Peak Forward Current I
FRM
− − 300 mAdc
Non−Repetitive Peak Forward Current (t < 1.0 s) I
FSM
− − 600 mAdc
BAT54XV2T1
http://onsemi.com
3
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820
0.1 F
DUT
V
R
100 H
0.1 F
50 Output
Pulse
Generator
50 Input
Sampling
Oscilloscope
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5101520
25
14
0
V
R
, REVERSE VOLTAGE (VOLTS)
12
4
2
0
51015 30
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.6
−55°C
150°C
125°C
100
1000
30
2520
6
8
10
I
R
, REVERSE CURRENT (A)
I
F
, FORWARD CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
P1-P3P4-P4

BAT54XV2T1

Mfr. #:
Buy BAT54XV2T1
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30V 200mW Single
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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