MAX5048AAUT+T

MAX5048
7.6A, 12ns, SOT23/TDFN, MOSFET Driver
7
Maxim Integrated
Detailed Description
Logic Inputs
The MAX5048A/MAX5048Bs’ logic inputs are protected
against voltage spikes up to +14V, regardless of the V+
voltage. The low 2.5pF input capacitance of the inputs
reduces loading and increases switching speed. These
devices have two inputs that give the user greater flexi-
bility in controlling the MOSFET. Table 1 shows all pos-
sible input combinations.
The difference between the MAX5048A and the
MAX5048B is the input threshold voltage. The
MAX5048A has V
CC
/2 CMOS logic-level thresholds,
while the MAX5048B has TTL logic-level thresholds (see
the
Electrical Characteristics
). For V+ above 5.5V, V
IH
(typ) = 0.5x(V+) + 0.8V and V
IL
(typ) = 0.5x(V+) - 0.8V.
As V+ is reduced from 5.5V to 4V, V
IH
and V
IL
gradually
approach V
IH
(typ) = 0.5x(V+) + 0.65V and V
IL
(typ) =
0.5x(V+) - 0.65V. Connect IN+ to V+ or IN- to GND
when not used. Alternatively, the unused input can be
used as an ON/OFF pin (see Table 1).
Undervoltage Lockout (UVLO)
When V+ is below the UVLO threshold, the N-channel
is ON and the P-channel is OFF, independent of the
state of the inputs. The UVLO is typically 3.6V with
400mV typical hysteresis to avoid chattering.
Driver Outputs
The MAX5048A/MAX5048B provide two separate out-
puts. One is an open-drain P-channel, the other an
open-drain N-channel. They have distinct current sourc-
ing/sinking capabilities to independently control the rise
and fall times of the MOSFET gate. Add a resistor in
series with P_OUT/N_OUT to slow the corresponding
rise/fall time of the MOSFET gate.
Applications Information
Supply Bypassing, Device Grounding,
and Placement
Ample supply bypassing and device grounding are
extremely important because when large external
capacitive loads are driven, the peak current at the V+
pin can approach 1.3A, while at the GND pin the peak
current can approach 7.6A. V
CC
drops and ground
shifts are forms of negative feedback for inverters and, if
excessive, can cause multiple switching when the IN-
input is used and the input slew rate is low. The device
driving the input should be referenced to the
MAX5048A/MAX5048B GND pin especially when the IN-
input is used. Ground shifts due to insufficient device
grounding may disturb other circuits sharing the same
AC ground return path. Any series inductance in the V+,
P_OUT, N_OUT and/or GND paths can cause oscilla-
tions due to the very high di/dt that results when the
MAX5048A/MAX5048B are switched with any capacitive
load. A 0.1µF or larger value ceramic capacitor is rec-
ommended bypassing V+ to GND and placed as close
to the pins as possible. When driving very large loads
(e.g., 10nF) at minimum rise time, 10µF or more of paral-
lel storage capacitance is recommended. A ground
plane is highly recommended to minimize ground return
resistance and series inductance. Care should be taken
to place the MAX5048A/MAX5048B as close as possi-
ble to the external MOSFET being driven to further mini-
mize board inductance and AC path resistance.
Power Dissipation
Power dissipation of the MAX5048A/MAX5048B con-
sists of three components, caused by the quiescent
current, capacitive charge and discharge of internal
nodes, and the output current (either capacitive or
resistive load). The sum of these components must be
kept below the maximum power-dissipation limit.
Pin Description
PIN NAME FUNCTION
1V+
Power Supply. Bypass to GND with a
0.1µF ceramic capacitor.
2 P_OUT
p-Channel Open-Drain Output. Sources
current for MOSFET turn-on.
3 N_OUT
n-Channel Open-Drain Output. Sinks
current for MOSFET turn-off.
4 GND Ground
5IN-
Inverting Logic Input Terminal. Connect
to GND when not used.
6 IN+
Noninverting Logic Input Terminal.
Connect to V+ when not used.
—EP
Exposed paddle. Connect to GND.
Solder EP to the GND plane for
improved thermal performance.
IN+ IN- p-CHANNEL n-CHANNEL
L L OFF ON
L H OFF ON
H L ON OFF
H H OFF ON
Table 1. Truth Table
L = Logic low
H = Logic high
MAX5048
7.6A, 12ns, SOT23/TDFN, MOSFET Driver
8
Maxim Integrated
The quiescent current is 0.95mA typical. The current
required to charge and discharge the internal nodes is
frequency dependent (see the
Typical Operating
Characteristics
). The MAX5048A/MAX5048B power dis-
sipation when driving a ground referenced resistive
load is:
P = D x R
ON(MAX)
x I
LOAD
2
where D is the fraction of the period the MAX5048A/
MAX5048Bs’ output pulls high, R
ON (MAX)
is the maxi-
mum on-resistance of the device with the output high
(P-channel), and I
LOAD
is the output load current of the
MAX5048A/MAX5048B.
For capacitive loads, the power dissipation is:
P = C
LOAD
x (V+)
2
x FREQ
where C
LOAD
is the capacitive load, V+ is the supply
voltage, and FREQ is the switching frequency.
Layout Information
The MOSFET drivers MAX5048A/MAX5048B source-
and-sink large currents to create very fast rise and fall
edges at the gate of the switching MOSFET. The high
di/dt can cause unacceptable ringing if the trace
lengths and impedances are not well controlled. The
following PCB layout guidelines are recommended
when designing with the MAX5048A/MAX5048B:
Place one or more 0.1µF decoupling ceramic capaci-
tor(s) from V+ to GND as close to the device as possi-
ble. At least one storage capacitor of 10µF (min)
should be located on the PC board with a low resis-
tance path to the V+ pin of the MAX5048A/MAX5048B.
There are two AC current loops formed between the
device and the gate of the MOSFET being driven.
The MOSFET looks like a large capacitance from
gate to source when the gate is being pulled low.
The active current loop is from N_OUT of the
MAX5048A/MAX5048B to the MOSFET gate to the
MOSFET source and to GND of the MAX5048A/
MAX5048B. When the gate of the MOSFET is being
pulled high, the active current loop is from P_OUT of
the MAX5048A/MAX5048B to the MOSFET gate to
the MOSFET source to the GND terminal of the
decoupling capacitor to the V+ terminal of the
decoupling capacitor and to the V+ terminal of the
MAX5048A/MAX5048B. While the charging current
loop is important, the discharging current loop is crit-
ical. It is important to minimize the physical distance
and the impedance in these AC current paths.
In a multilayer PCB, the component surface layer
surrounding the MAX5048A/MAX5048B should con-
sist of a GND plane containing the discharging and
charging current loops.
IN+
V
IL
90%
10%
t
D–OFF
P_OUT AND
N_OUT
TIED
TOGETHER
t
D–ON
t
F
t
R
IN+
IN-
V+
V+
C
L
N_OUT
GND
P_OUT
TEST CIRCUIT
TIMING DIAGRAM
MAX5048A
MAX5048B
INPUT
OUTPUT
V
IH
Figure 1. Timing Diagram and Test Circuit
MAX5048
7.6A, 12ns, SOT23/TDFN, MOSFET Driver
9
Maxim Integrated
BREAK-
BEFORE-
MAKE
CONTROL
P
N
N_OUT
GND
IN-
IN+
P_OUT
V+
MAX5048A
MAX5048B
Figure 2. MAX5048A/MAX5048B Functional Diagram
MAX5048A
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
V
S
V+
(4V TO 12.6V)
Figure 3. Noninverting Application
MAX5048A
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
V
S
V
OUT
FROM PWM
CONTROLLER
(BOOST)
V+
(4V TO 12.6V)
Figure 4. Boost Converter
MAX5048A
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
MAX5048A/
MAX5048B
P_OUT
N_OUT
IN-
GND
IN+
V+
FROM PWM
CONTROLLER
(BUCK)
V
OUT
4V TO 12V
P
N
Figure 5. MAX5048A/MAX5048B in High-Power Synchronous
Buck Converter

MAX5048AAUT+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Gate Drivers 7.6A 12ns MOSFET Driver
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet