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BCX79_J35Z

P1-P3
BCX79
PNP General Purpose Amplifier
BCX79
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 68. See PN200A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CES
Collector-Base Voltage 45 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 500 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Symbol Characteristic Max Units
BCX79
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 200
°
C/W
E
B
C
TO-92
1997 Fairchild Semiconductor Corporation
BCX79
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 10 mA, I
B
= 045V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1.0
µ
A, I
C
= 0
5.0 V
I
CEX
Collector Cutoff Current V
CE
= 45 V, V
BE
= 0.2 V,
T
A
= +100
°
C
20
µ
A
I
CES
Collector Cutoff Current V
CE
= 45 V, I
E
= 0,
V
CE
= 45 V, I
E
= 0, T
A
= +125
°
C
10
2.5
nA
µ
A
I
EBO
Emitter Cutoff Current V
EB
= 4.0 V, I
C
= 0 20 nA
ON CHARACTERISTICS
h
FE
DC Current Gain V
CE
= 5.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 100 mA
120
80
40
630
1,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage I
C
= 100 mA, I
B
= 2.5 mA 0.6 V
V
BE(
sat
)
Base-Emitter Saturation Voltage I
C
= 100 mA, I
B
= 2.5 mA 1.0 V
V
BE(
on
)
Base-Emitter On Voltage V
CE
= 5.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 100 mA
0.6 0.7
0.9
V
V
SMALL SIGNAL CHARACTERISTICS
C
cb
Collector-Base Capacitance V
CB
= 10 V, f = 1.0 MHz 4.5 pF
C
eb
Emitter-Base Capacitance V
EB
= 0.5 V, f = 1.0 MHz 15 pF
h
ie
Input Impedance I
C
= 2.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
1.6 8.5
k
Ω
h
oe
Output Admittance I
C
= 2.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
100
µ
mhos
NF Noise Figure V
CE
= 5.0 V, I
C
= 0.2 mA,
R
S
= 2.0 k
Ω
, f = 1.0 kHz
6.0 dB
SWITCHING CHARACTERISTICS
t
on
Turn-on Time V
CC
= 10 V, I
C
= 10 mA,
V
BB
= 3.6 V, I
B1
= I
B2
= 1.0 mA
150 ns
t
on
Turn-on Time V
CC
= 10 V, I
C
= 100 mA,
V
BB
= 5.0 V, I
B1
= I
B2
= 10 mA
150 ns
t
off
Turn-off Time V
CC
= 10 V, I
C
= 10 mA,
V
BB
= 3.6 V, I
B1
= I
B2
= 1.0 mA
800 ns
t
off
Turn-off Time V
CC
= 10 V, I
C
= 100 mA,
V
BB
= 5.0 V, I
B1
= I
B2
= 10 mA
800 ns
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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P1-P3

BCX79_J35Z

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Buy BCX79_J35Z
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 45V 0.5A TO-92
Lifecycle:
New from this manufacturer.
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