MBR30H100CT, MBRF30H100CT, MBRB30H100CT
www.vishay.com
Vishay General Semiconductor
Revision: 11-Jun-2018
1
Document Number: 88791
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DESIGN SUPPORT TOOLS
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
100 V
I
FSM
275 A
V
F
0.67 V
I
R
5.0 μA
T
J
max. 175 °C
Package
TO-220AC, ITO-220AC,
D
2
PAK (
TO-263AB)
Circuit configuration Dual common cathode
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR30H100CT
ITO-220AB
MBRB30H100CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF30H100CT
PIN 2
PIN 1
PIN 3
1
2
3
D
2
PAK (TO-263AB)
click logo to get started
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR30H100CT UNIT
Maximum repetitive peak reverse voltage V
RRM
100
VWorking peak reverse voltage V
RWM
100
Maximum DC blocking voltage V
DC
100
Maximum average forward rectified current
(fig.1)
total device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I
FSM
275
Peak repetitive reverse surge current per diode
at t
p
= 2.0 μs, 1 kHz
I
RRM
1.0
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V
AC
1500 V
