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IRFSL3307

P1-P3P4-P6P7-P9P10-P12
01/20/06
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
www.irf.com 1
D
2
Pak
IRFS3307
TO-220AB
IRFB3307
TO-262
IRFSL3307
IRFB3307
IRFS3307
IRFSL3307
HEXFET
®
Power MOSFET
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
SDG
SDG
SDG
V
DSS
75V
R
DS(on)
typ.
5.0m
max.
6.3m
D
130A
Absolute Maximum Ratings
Symbol
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case
––– 0.61
R
θCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 ––– °C/W
R
θJA
Junction-to-Ambient, TO-220
––– 62
R
θJA
Junction-to-Ambient (PCB Mount) , D
2
Pak
––– 40
300
Max.
130
91
510
270
See Fig. 14, 15, 16a, 16b
250
11
-55 to + 175
± 20
1.6
10lb in (1.1N m)
PD - 96901C
IRFB3307/IRFS3307/IRFSL3307
2 www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.096mH
R
G
= 25Ω, I
AS
= 75A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤ 75A, di/dt ≤ 530A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
–––
0.069
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
5.0
6.3
mΩ
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
I
DSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
R
G
Gate Input Resistance
–––
1.5
–––
Ω
f = 1MHz, open drain
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
98
–––
–––
S
Q
g
Total Gate Charge
–––
120
180
nC
Q
gs
Gate-to-Source Charge
–––
35
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
46
–––
t
d(on)
Turn-On Delay Time
–––
26
–––
ns
t
r
Rise Time
–––
120
–––
t
d(off)
Turn-Off Delay Time
–––
51
–––
t
f
Fall Time
–––
63
–––
C
iss
Input Capacitance
–––
5150
–––
pF
C
oss
Output Capacitance
–––
460
–––
C
rss
Reverse Transfer Capacitance
–––
250
–––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
–––
570
–––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
–––
700
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
–––
–––
130
A
(Body Diode)
I
SM
Pulsed Source Current
–––
–––
510
A
(Body Diode)
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
38
57
ns
T
J
= 25°C
V
R
= 64V,
–––
46
69
T
J
= 125°C
I
F
= 75A
Q
rr
Reverse Recovery Charge
–––
65
98
nC
T
J
= 25°C
di/dt = 100A/µs
–––
86
130
T
J
= 125°C
I
RRM
Reverse Recovery Current
–––
2.8
–––
A
T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 75A
R
G
= 3.9Ω
V
GS
= 10V
V
DD
= 48V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
V
DS
= 60V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V , See Fig.11
V
GS
= 0V, V
DS
= 0V to 60V , See Fig. 5
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
GS
= 20V
V
GS
= -20V
IRFB3307/IRFS3307/IRFSL3307
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
2 4 6 8 10
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 25V
≤
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 75A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120 140
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 60V
V
DS
= 38V
V
DS
= 15V
I
D
= 75A
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
≤
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
P1-P3P4-P6P7-P9P10-P12

IRFSL3307

Mfr. #:
Buy IRFSL3307
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 75V 130A TO-262
Lifecycle:
New from this manufacturer.
Delivery:
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