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RF505B6STL

P1-P3P4-P4
RF505B6S
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Super Fast Recovery Diode
RF505B6S
Series Dimensions（Unit : mm） Land size figure (Unit : mm)
Standard Fast Recovery
Applications
General rectification
Features
1)Power mold type. (CPD)
2)High switching speed
3)Low Reverse current Structure
Construction
Silicon epitaxial planar
Taping dimensions（Unit : mm）
Absolute maximum ratings（Tc=25C）
Symbol
V
RM
V
R
Tj
Tstg
Electrical characteristics（Tj=25C）
Symbol Unit
I
R
μA
trr ns
Thermal resistance Rth(j-l)
C/W
C
5
C
50 A
Parameter Conditions Limits Unit
Junction temperature 150
Storage temperature
55 to 150
Forward current surge peak
I
FSM
60Hz half sin wave, Non-repetitive
A
Tc=42C
Average rectified forward current Io
60Hz half sin wave,resistive load
one cycle peak value, Tj=25 C
Reverse voltage Direct voltage 600 V
Repetitive peak Reverse voltage
Duty0.5
600 V
Reverse current
V
R
=600V
- 0.05
Parameter Conditions Min.
VForward voltage
V
F
I
F
=5.0A
-
Typ.
12
junction to lead
-
－
30
Max.
1.3 1.7
10
Reverse recovery time
I
F
=0.5A,I
R
=1A,Irr=0.25×I
R
-22
CPD
1.6
2.3
1.6
2.3
3.0 2.0 6.0
6.0
(2)
(1)
(3)
(1)
(2)
(3)
Production month
1/3
2011.05 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RF505B6S
　
Electrical characteristic curves
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=100mA
I
F
=1.5A
300us
time
On glass-epoxy board
120
130
140
150
160
170
AVE:150.6pF
Tj=25 C
f=1MHz
V
R
=0V
n=10pcs
10
100
1000
110100
t
Ifsm
1
10
100
1000
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
50
100
150
200
250
300
AVE:107.5A
8.3ms
Ifsm
1cyc
1
10
100
1000
10000
100000
0 100 200 300 400 500 600
1
10
100
1100
1150
1200
1250
1300
1350
1400
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(nA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Tj=25C
V
R
=600V
n=20pcs
AVE:33.7nA
AVE:1297mV
Tj=25
C
I
F
=5A
n=20pcs
V
F
DISPERSION MAP
I
R
DISPERSION MAP
Ct DISPERSION MAP
TIME:t(s)
Rth-t CHARACTERISTICS
trr DISPERSION MAP
0
5
10
15
20
25
30
AVE:22.0ns
Tj=25
C
I
F
=0.5A
I
R
=1A
Irr=0.25×I
R
n=10pcs
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
AVE:19.9kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.01
0.1
1
10
100
0 500 1000 1500 2000 2500
Tj=150C
Tj=125
C
Tj=25 C
Tj=150
C
Tj=125
C
Tj=25C
1
10
100
1000
0 5 10 15 20 25 30
f=1MHz
Tj=75C
Tj=75C
FORWARD CURRENT:I
F
(A)
FORWARD VOLTAGE:V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE VOLTAGE:V
R
(V)
V
R
-I
R
CHARACTERISTICS
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
I
FSM
DISRESION MAP
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (
C/W)
2/3
2011.05 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RF505B6S
　
FORWARD POWER
DISSIPATION:Pf(W)
0
1
2
3
4
5
6
7
8
9
0 30 60 90 120 150
D.C.
D=0.2
D=0.1
D=0.05
half sin wave
D=0.8
D=0.5
0
1
2
3
4
5
6
7
8
9
0 30 60 90 120 150
D.C.
D=0.5
D=0.2
D=0.1
D=0.05
half sin wave
D=0.8
AMBIENT TEMPERATURE:Ta(
C)
Derating Curve"(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
T
Tj=150C
D=t/T
t
V
R
Io
V
R
=480V
0A
0V
T
Tj=150C
D=t/T
t
V
R
Io
V
R
=480V
0A
0V
0
1
2
3
4
5
6
7
02468
half sin wave
D.C.
D=0.5
D=0.2
D=0.1
D=0.05
D=0.8
3/3
2011.05 - Rev.A
P1-P3P4-P4

RF505B6STL

Mfr. #:
Buy RF505B6STL
Manufacturer:
ROHM Semiconductor
Description:
Rectifiers RECOMMENDED ALT 755-RF505BM6STL
Lifecycle:
New from this manufacturer.
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