Electrical specifications VNH5180A-E
10/31 Doc ID 17074 Rev 6
I
L(off)
High-side off-state output
current (per channel)
T
j
=2C; V
OUTX
=EN
X
=0V;
V
CC
=13V
03µA
T
j
= 125 °C; V
OUTX
=EN
X
=0V;
V
CC
=13V
05µA
I
RM
Dynamic cross-
conduction current
I
OUT
= 2.5A (see Figure 6)0.6A
Table 9. Logic inputs (IN
A
, IN
B
, EN
A
, EN
B
, PWM, CS_DIS)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
IL
Input low level voltage
Normal operation
(DIAG
X
/EN
X
pin acts as an
input pin)
0.9 V
V
IH
Input high level voltage
Normal operation
(DIAG
X
/EN
X
pin acts as an
input pin)
2.1 V
V
IHYST
Input hysteresis voltage
Normal operation
(DIAG
X
/EN
X
pin acts as an
input pin)
0.15 V
V
ICL
Input clamp voltage
I
IN
= 1 mA 5.5 6.3 7.5 V
I
IN
=-1mA -1.0-0.7-0.3 V
I
INL
Input current V
IN
=0.9V 1 µA
I
INH
Input current V
IN
=2.1V 10 µA
V
DIAG
Enable output low
level voltage
Fault operation
(DIAG
X
/EN
X
pin acts as an
output pin); I
EN
=1mA
0.4 V
Table 10. Switching (V
CC
=13V, R
LOAD
=5Ω)
Symbol Parameter Test conditions Min. Typ. Max. Unit
f PWM frequency 0 20 kHz
t
d(on)
Turn-on delay time
Input rise time < 1µs
(see Figure 6)
250 µs
t
d(off)
Turn-off delay time
Input rise time < 1µs
(see Figure 6)
250 µs
t
r
Rise time See Figure 5 12µs
t
f
Fall time See Figure 5 12µs
t
DEL
Delay time during change
of operating mode
See Figure 4 200 400 1600 µs
t
rr
High-side free wheeling
diode reverse recovery
time
See Figure 7 400 ns
Table 8. Power section (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
VNH5180A-E Electrical specifications
Doc ID 17074 Rev 6 11/31
Table 11. Protections and diagnostics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
USD
Undervoltage shutdown 3 5 V
V
USDhyst
Undervoltage shutdown
hysteresis
0.5 V
I
LIM_H
High-side current limitation 8 12 16 A
I
SD_LS
Shutdown LS current 16 30 52 A
V
CLPH
High-side clamp voltage (V
CC
to
OUT
A
=0 or OUT
B
=0)
I
OUT
= 2.5 A 41 46 52 V
V
CLPLS
Low-side clamp voltage
(OUT
A
=V
CC
or
OUT
B
= V
CC
to GND)
I
OUT
=2.5A 41 46 52 V
T
TSD
(1)
1. T
TSD
is the minimum threshold temperature between HS and LS
Thermal shutdown temperature V
IN
= 2.1 V 150 175 200 °C
T
TR
(2)
2. Valid for both HSD and LSD.
Thermal reset temperature 135 °C
T
HYST
(2)
Thermal hysteresis (T
SD
-T
R
)7°C
T
TSD_LS
Low-side thermal shutdown
temperature
V
IN
= 2.1 V 150 175 200 °C
V
CLP
Total clamp voltage (V
CC
to GND) I
OUT
=2.5A 41 46 52 V
t
SD_LS
Time to shutdown for the low-side 10 µs
Table 12. Current sense (9 V < V
CC
<18V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
K
0
I
OUT
/I
SENSE
I
OUT
=0.35A; V
SENSE
= 0.32 V;
V
CSD
=0V; T
j
= - 40 to 150 °C
645 840 1140
K
1
I
OUT
/I
SENSE
I
OUT
= 1 A; V
SENSE
= 0.98 V;
V
CSD
=0V; T
j
= - 40 to 150 °C
700 820 955
K
2
I
OUT
/I
SENSE
I
OUT
= 2.5 A; V
SENSE
= 2.4 V;
V
CSD
= 0 V; T
j
= - 40 to 150 °C
710 810 900
K
3
I
OUT
/I
SENSE
I
OUT
= 4 A; V
SENSE
= 4 V; V
CSD
= 0 V;
T
j
= - 40 to 150 °C
690 790 900
dK
0
/K
0
(1)
Analog sense
current drift
I
OUT
= 0.35A;
V
SENSE
= 0.32V;
V
CSD
= 0 V; T
j
= - 40 to 150 °C
-18 18 %
dK
1
/K
1
(1)
Analog sense
current drift
I
OUT
=1A;
V
SENSE
= 0.98 V;
V
CSD
= 0 V; T
j
= - 40 to 150 °C
-13 13 %
dK
2
/K
2
(1)
Analog sense
current drift
I
OUT
=2.5A;
V
SENSE
= 2.4V;
V
CSD
= 0 V; T
j
= - 40 to 150 °C
-13 13 %
dK
3
/K
3
(1)
Analog sense
current drift
I
OUT
=4A;
V
SENSE
= 4V; V
CSD
= 0 V;
T
j
= - 40 to 150 °C
-13 13 %
V
SENSE
Max analog sense
output voltage
I
OUT
= 2.5A; V
CSD
=0V;
R
SENSE
=2KΩ
5V
Electrical specifications VNH5180A-E
12/31 Doc ID 17074 Rev 6
Figure 4. Definition of the delay times measurement
I
SENSE0
Analog sense
leakage current
I
OUT
= 0 A; V
SENSE
=0V; V
CSD
=5V;
V
IN
=0V; T
j
= - 40 to 150 °C
05µA
V
CSD
=0V; V
IN
=5V;
T
j
= - 40 to
.
150 °C
0 180 µA
V
CSD
=5V; V
IN
=5V; I
OUT
= 2.5 A;
T
j
= - 40 to
.
150 °C
05µA
t
DSENSEH
Delay response time
from falling edge of
CS_DIS pin
V
IN
=5V; V
SENSE
<4V, I
OUT
=2.5A,
I
SENSE
=90% of I
SENSEmax
(see Figure 8)
50 µs
t
DSENSEL
Delay response time
from rising edge of
CS_DIS pin
V
IN
=5V; V
SENSE
<4V; I
OUT
=2.5A;
I
SENSE
=10% of I
SENSEmax
(see Figure 8)
20 µs
1. Analog sense current drift is deviation of factor K for a given device over (-40 °C to 150 °C and
9V < V
CC
< 18 V) with respect to its value measured at T
J
= 25 °C, V
CC
= 13 V.
Table 12. Current sense (9 V < V
CC
< 18 V) (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
t
V
INB
V
INA
t
PWM
t
I
LOAD
t
DEL
t
DEL

STEVAL-VNH5180A

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Power Management IC Development Tools VNH5180A VIPower STM8 VNH Driver
Lifecycle:
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