MCMA200P1600SA
04080120160
0
50
100
150
200
250
300
350
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
0.01 0.1 1
2000
3000
4000
5000
6000
0.0 0.5 1.0 1.5
0
100
200
300
400
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
I
T
[A]
t[s]
V
T
[V]
23456789011
10
4
10
5
10
6
I
2
t
[A
2
s]
t[ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
=45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
=0 V
I
TAVM
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
Fig. 3 I
2
t vs. time per thyristor
Fig. 4 Gate voltage & gate current
Fig. 6 Max. forward current vs.
case temperature per thyr.
Fig. 8 Transient thermal impedance junction to case
vs. time per thyristor
t
gd
[μs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 50 100 150 200 250
0
50
100
150
200
250
300
350
I
T(AV)
[A]
P
tot
[W]
Fig. 7 Power dissipation vs. forward current
and ambient temperature per th
ristor
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
I
G
[A]
T
VJ
= 140°C
T
VJ
= 140°C
T
VJ
= 125°C
140°C
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
V
G
[V]
1: I
GT
,T
VJ
= 125°C
2: I
GT
,T
VJ
=25°C
3: I
GT
,T
VJ
=-40°C
1
2
3
4
5
6
I
GD
,T
VJ
=140°C
iR
thi
(K/W) t
i
(s)
1 0.0050 0.00010
2 0.0110 0.01800
3 0.0430 0.16000
4 0.0610 0.50000
5 0.0300 1.60000
R
thHA
0.08
0.10
0.20
0.40
0.60
0.80
4: P
GM
=8W
5: P
GM
=60W
6: P
GM
=120W
T
VJ
= 25°C
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20140319bData according to IEC 60747and per semiconductor unless otherwise specified
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