ASMT-QHB2-FEF0E

4
Figure 2. Relative intensity vs. wavelength Figure 3. Forward current vs. forward voltage
Figure 4. Relative intensity vs. forward current Figure 5. Relative intensity vs. temperature
Figure 6a. Maximum forward current vs. ambient temperature. Derated
based on T
JMAX
= 125°C, Rθ
J-A
= 130°C/W, 110°C/W, 100°C/W and 80°C/W.
WAVELENGTH – nm
RELATIVE INTENSITY
1.0
0.8
0
380 480 580 680 730 780
630530430
0.6
0.4
0.2
AlInGaP RED
0.1
0.3
0.5
0.7
0.9
AlInGaP AMBER
AlInGaP
RED-ORANGE
0
FORWARD VOLTAGE – V
0
40
140
160
180
200
FORWARD CURRENT – mA
80
20
100
60
120
43
12
AlInGaP RED
AlInGaP AMBER
AlInGaP
RED-ORANGE
050
DC FORWARD CURRENT – mA
0
0.4
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 150 mA)
200100 150
0.2
0.8
0.6
1.0
1.2
RED/RED-ORANGE
AMBER
-50 -25 0
JUNCTION TEMPERATURE – C
0
0.4
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 25 C)
12525 50 75 100
0.2
0.8
0.6
1.0
2.2
1.2
1.4
1.6
1.8
2.0
RED
AMBER
RED-ORANGE
0
160
0
20 60 80 120
MAXIMUM FORWARD CURRENT – mA
JUNCTION TEMPERATURE – °C
40
100
120
60
80
40
20
140
100
R
JA
=
80 °C/W
R
JA
= 110 °C/W
R
JA
= 100 °C/W
R
JA
= 130 °C/W
Figure 6b. Maximum forward current vs. solder point temperature.
Derated based on T
JMAX
= 125°C, R
JP
= 60°C/W.
0
160
0
20 60 80 120
CURRENT – mA
TEMPERATURE – °C
40
100
120
60
80
40
20
140
100
AMBER / RED-ORANGE
RED
5
Figure 7a. Maximum pulse current vs. ambient temperature. Derated
based on T
A
= 25°C, Rθ
J-A
=110°C/W.
Figure 7b. Maximum pulse current vs. ambient temperature.Derated vased
on T
A
= 85°C, Rθ
J-P
=110°C/W.
0.00
0.10
0.20
0.30
1.00E-05 1.00E-03 1.00E-01 1.00E+01
t
p
- Time - (S)
CURRENT - A
D =
t
p
T
t
p
I
F
T
D =
0.05
0.10
0.25
0.50
1
0.00
0.10
0.20
0.30
1.00E-05 1.00E-03 1.00E-01 1.00E+01
t
p
- Time - (S)
CURRENT - A
D =
t
p
T
t
p
I
F
T
D =
0.05
0.10
0.25
0.50
1
Figure 9. Forward voltage shift vs. temperature
Figure 10. Radiation pattern
Figure 8. Dominant wavelength vs. forward current – AlInGaP devices
DOMINANT WAVELENGTH – nm
0
580
FORWARD CURRENT – mA
200
620
50
630
100
600
150
590
610
AlInGaP RED
AlInGaP RED-ORANGE
AlInGaP AMBER
FORWARD VOLTAGE SHIFT (V)
-50
-0.15
T
J
– JUNCTION TEMPERATURE – C
100
0.05
0.10
-25
0.15
0255075
-0.05
-0.10
0
NORMALIZED INTENSITY
-90
0
ANGULAR DISPLACEMENT – DEGREES
90
0.9
0.6
1.0
-60 -30
0.4
30 600
0.3
0.2
0.1
0.5
0.8
0.7
6
Figure11. Recommended pick and place nozzle size
Figure 12. Recommended Pb-free re ow soldering pro le
Note: For detail information on re ow soldering of Avago sur-
face mount LEDs, do refer to Avago Application Note AN 1060
Surface Mounting SMT LED Indicator Components.
217 °C
200 °C
150 °C
60 - 120 SEC.
-6 °C/SEC. MAX.
3 °C/SEC. MAX.
3 °C/SEC. MAX.
255 - 260 °C
100 SEC. MAX.
10 - 30 SEC.
TIME
TEMPERATURE
(Acc. to J-STD-020C)
Figure 13. Recommended soldering pad pattern
ANODE
MARKING
0.4
0.3
MINIMUM 55 mm
2
OF ANODE PAD
FOR IMPROVED HEAT DISSIPATION
2.4
0.6
0.9 X 6
4.6
1.1
1.3 x 6
ANODE
MARKING
A
C
C C
A A
A A
SOLDER MASK
ANODE
CATHODE
CC
AA
ID
Note: Diameter "ID" should
be bigger than 2.3mm

ASMT-QHB2-FEF0E

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
High Power LEDs - Single Color 0.5 Watt Orange
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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