Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
ASMT-QHB2-FEF0E
P1-P3
P4-P6
P7-P9
4
Figure 2. Relativ
e intensity vs. wa
velength
Figure 3. F
orward current vs. for
ward v
oltage
Figure 4. Relativ
e intensity vs. forward current
Figure 5. Relativ
e intensity vs. temperature
Figure 6a. Maximum forward current vs. ambient temperature
. Derated
based on T
JMAX
= 125°C, R
θ
J-A
= 130°C/W
, 110°C/W
, 100°C/W and 80°C/W
.
WAVELENGTH – nm
RELATIVE INTENSITY
1.0
0.8
0
380
480
580
680
730
780
630
530
430
0.6
0.4
0.2
AlInGaP RED
0.1
0.3
0.5
0.7
0.9
AlInGaP AMBER
AlInGaP
RED-ORANGE
0
FORWARD VOLTAGE – V
0
40
140
160
180
200
FORWARD CURRENT – mA
80
20
100
60
120
4
3
12
AlInGaP RED
AlInGaP AMBER
AlInGaP
RED-ORANGE
05
0
DC FORWARD CURRENT – mA
0
0.4
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 150 mA)
200
100
150
0.2
0.8
0.6
1.0
1.2
RED/RED-ORANGE
AMBER
-50
-25
0
JUNCTION TEMPERATURE – C
0
0.4
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 25 C)
125
25
50
75
100
0.2
0.8
0.6
1.0
2.2
1.2
1.4
1.6
1.8
2.0
RED
AMBER
RED-ORANGE
0
160
0
20
60
80
120
MAXIMUM FORWARD CURRENT – mA
JUNCTION TEMPERATURE – °C
40
100
120
60
80
40
20
140
100
R
JA
=
80 °C/W
R
JA
= 110 °C/W
R
JA
= 100 °C/W
R
JA
= 130 °C/W
Figure 6b
. Maximum forward current vs. solder point temperature.
Derated based on T
JMAX
= 125°C, R
JP
= 60°C/W
.
0
160
0
20
60
80
120
CURRENT – mA
TEMPERATURE – °C
40
100
120
60
80
40
20
140
100
AMBER / RED-
ORANGE
RED
5
Figure 7a. Maximum pulse current vs. ambient temperature
. Derated
based on T
A
= 25°C, R
θ
J-A
=110°C/W
.
Figure 7b
. Maximum pulse current vs. ambient temperature.Dera
ted vased
on T
A
= 85°C, R
θ
J-P
=110°C/W
.
0.00
0.10
0.20
0.30
1.00E-05
1.00E-03
1.00E-01
1.00E+01
t
p
- Time - (S)
CURRENT - A
D =
t
p
T
t
p
I
F
T
D =
0.05
0.10
0.25
0.50
1
0.00
0.10
0.20
0.30
1.00E-05
1.00E-03
1.00E-01
1.00E+01
t
p
- Time - (S)
CURRENT - A
D =
t
p
T
t
p
I
F
T
D =
0.05
0.10
0.25
0.50
1
Figure 9. F
orward voltage shift vs. temperature
Figure 10. Radiation patt
ern
Figure 8. Dominant wa
velength vs. f
or
w
ard current – AlInGaP devices
DOMINANT WAVELENGTH – nm
0
580
FORWARD CURRENT – mA
200
620
50
630
100
600
150
590
610
AlInGaP RED
AlInGaP RED-ORANGE
AlInGaP AMBER
FORWARD VOLTAGE SHIFT (V)
-50
-0.15
T
J
– JUNCTION TEMPERATURE – C
100
0.05
0.10
-25
0.15
02
5
5
0
7
5
-0.05
-0.10
0
NORMALIZED INTENSITY
-90
0
ANGULAR DISPLACEMENT – DEGREES
90
0.9
0.6
1.0
-60
-30
0.4
30
60
0
0.3
0.2
0.1
0.5
0.8
0.7
6
Figure11. Recommended pick and place nozzle size
Figure 12. Recommended Pb-free re
ow soldering pro
le
Note:
For detail inf
ormation on re
ow soldering of Av
ago sur-
face mount LEDs, do ref
er to A
vago Application Note AN 1060
Sur
face Mounting SMT LED Indicator C
omponents.
217
°
C
200
°
C
150
°
C
60 - 120 SEC.
-6
°
C/SEC. MAX.
3
°
C/SEC. MAX.
3
°
C/SEC. MAX.
255 - 260
°
C
100 SEC. MAX.
10 - 30 SEC.
TIME
TEMPERA
TURE
(Acc. to J-STD-020C)
Figure 13. Recommended soldering pad pattern
ANODE
MARKING
0.4
0.3
MINIMUM 55 mm
2
OF ANODE PAD
FOR IMPROVED HEAT DISSIPATION
2.4
0.6
0.9 X 6
4.6
1.1
1.3 x 6
ANODE
MARKING
A
C
C
C
A
A
A
A
SOLDER MASK
ANODE
CATHODE
CC
AA
ID
Note: Diameter "ID" should
be bigger than 2.3mm
P1-P3
P4-P6
P7-P9
ASMT-QHB2-FEF0E
Mfr. #:
Buy ASMT-QHB2-FEF0E
Manufacturer:
Broadcom / Avago
Description:
High Power LEDs - Single Color 0.5 Watt Orange
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
ASMT-QAB2-FDE0E
ASMT-QHB2-FEF0E
ASMT-QRB2-FCD0E