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STX13003G-AP

P1-P3P4-P6P7-P9P10-P11
December 2010 Doc ID 7928 Rev 6 1/11
11
STX13003
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Very high switching speed
Applications
■ Compact fluorescent lamps (CFLs)
■ SMPS for battery charger
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
Figure 1. Internal schematic diagram
TO-92
TO-92AP
Table 1. Device summary
(1)
Order codes Marking Package Packaging
STX13003 X13003 TO-92 Bag
STX13003G X13003G TO-92 Bag
STX13003-AP X13003 TO-92AP Ammopack
STX13003G-AP X13003G TO-92AP Ammopack
1. The letter "G" in the order code suffix identifies the product as ECOPACK®2 grade. Please see Section 3 for details.
www.st.com
Electrical ratings STX13003
2/11 Doc ID 7928 Rev 6
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
BE
= 0) 700 V
V
CEO
Collector-emitter voltage (I
B
= 0) 400 V
V
EBO
Emitter-base voltage (I
C
= 0, I
B
= 0.5 A, t
P
< 10 ms) V
(BR)EBO
V
I
C
Collector current 1 A
I
CM
Collector peak current (t
P
< 5 ms) 3 A
I
B
Base current 0.5 A
I
BM
Base peak current (t
P
< 5 ms) 1.5 A
P
TOT
Total dissipation at T
c
= 25 °C 1.5 W
T
stg
Storage temperature -65 to 150
°C
T
J
Max. operating junction temperature 150
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case__________max 83 °C/W
STX13003 Electrical characteristics
Doc ID 7928 Rev 6 3/11
2 Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
Collector cut-off current
(V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V T
C
= 125 °C
1
5
mA
mA
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
I
E
= 10 mA 9 18 V
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage (I
B
= 0)
I
C
= 10 mA 400 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 0.5 A I
B
= 100 mA
I
C
= 1 A I
B
= 250 mA
I
C
= 1.5 A I
B
= 500 mA
0.5
1
1.5
V
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 0.5 A I
B
= 100 mA
I
C
= 1 A I
B
= 250 mA
1
1.2
V
V
h
FE
DC current gain
I
C
= 0.5 A V
CE
= 2 V
I
C
= 1 A V
CE
= 2 V
8
5
25
25
t
r
t
s
t
f
Resistive load
Rise time
Storage time
Fall time
I
C
= 1 A ___ _ t
p
= 25 µs
I
B1
= -I
B2
= 200 mA
V
CC
= 125 V Figure 12
1
4
0.7
µs
µs
µs
t
s
Inductive Load
Storage time
I
C
= 1 A V
clamp
= 300 V
I
B1
= 200 mA V
BE(off)
= -5 V
L
= 50 mH R
BB
= 0
Figure 13
0.8 µs
P1-P3P4-P6P7-P9P10-P11

STX13003G-AP

Mfr. #:
Buy STX13003G-AP
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT High Voltage NPN 700Vces 400Vceo
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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