DF3D36FU
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Electrostatic discharge voltage (IEC61000-4-2)(Air)
Electrostatic discharge voltage (ISO10605)(Contact)
Electrostatic discharge voltage (ISO10605)(Air)
Peak pulse power (tp = 8/20 µs)
Peak pulse current (tp = 8/20 µs)
Junction temperature
Storage temperature
Symbol
V
ESD
V
ESD
P
PK
I
PP
T
j
T
stg
Note
(Note 1)
(Note 2)
(Note 3)
Rating
±20
±20
150
2.5
150
-55 to 150
Unit
kV
kV
W
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to ISO10605. (@ C = 330 pF, R = 2 kΩ)
Note 3: According to IEC61000-4-5.
2016-05-10
Rev.1.0
©2016 Toshiba Corporation