OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN2004K-7

P1-P3P4-P6
DMN2004K
Document number: DS30938 Rev. 9 - 2
1 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004
K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
20V
0.55 @ V
GS
= 4.5V
630mA
0.9 @ V
GS
= 1.8V
410mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Features and Benefits
Low On-Resistance: R
DS(ON)
= 550
(max)
m @ V
GS
= 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN2004K-7 SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View
D
G
S
Top View
NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
ESD PROTECTED TO 2kV
Source
Gate
Protection
Diode
Gate
Drain
Equivalent Circuit
Shanghai A/T Site
Chengdu A/T Site
e3
Y
Y
M
NAB
YM
NAB
YM
DMN2004K
Document number: DS30938 Rev. 9 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004
K
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
630
450
mA
Drain Current (Note 5) V
GS
= 1.8V
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
410
300
mA
Pulsed Drain Current (Note 6)
I
DM
1.5 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
350 mW
Thermal Resistance, Junction to Ambient
R
JA
357 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
I
DSS
1 µA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
1
µA
V
GS
= 4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5
1.0 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
0.4
0.5
0.7
0.55
0.70
0.9
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
|Y
fs
|
200
ms
V
DS
=10V, I
D
= 0.2A
Source Current
I
S
0.5 A
Diode Forward Voltage (Note 7)
V
SD
0.6
1 V
V
GS
= 0V, I
S
= 500mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
150 pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25 pF
Reverse Transfer Capacitance
C
rss
20 pF
Gate Resistance
R
g
292
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
0.9
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 0.5A
Gate-Source Charge
Q
gs
0.2
Gate-Drain Charge
Q
gd
0.2
Turn-On Delay Time
t
D(on)
5.7
ns
V
GS
= 8V, V
DS
= 15V,
R
G
= 6, R
L
= 30
Turn-On Rise Time
t
r
8.4
Turn-Off Delay Time
t
D(off)
59.4
Turn-Off Fall Time
t
f
37.6
Body Diode Reverse Recovery Time
t
rr
5.5
ns
I
S
= 0.5A, dI/dt = -100A/µs
Body Diode Reverse Recovery Charge
Q
rr
0.85
nC
I
S
= 0.5A, dI/dt = -100A/µs
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2004K
Document number: DS30938 Rev. 9 - 2
3 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004
K
0
0
12345
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.3
0.6
0.9
V = 1.2V
GS
V = 1.8V
GS
V = 2.0V
GS
V = 2.2V
GS
V = 1.4V
GS
V = 1.6V
GS
V , GATE-SOURCE VOLTAGE (V)
Figure 2
GS
Reverse Drain Current vs. Source-Drain Voltage
100
0
1,000
I,
D
D
R
AI
N
C
U
R
R
E
N
T
(mA)
200
300
400
500
600
700
800
900
0.4 0.8 1.2
1.6
2
V = 10V
Pulsed
DS
T = 150 C
A
°
T = -55C
A
°
T = 5C
A
8
°
T = 25C
A
°
T , CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage
vs. Channel Temperature
ch
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th),
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-75 -50 -25
0255075
100
125 150
V= 10V
I= 1mA
Pulsed
DS
D
0.1
I DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance
vs. Drain Current
D
,
1
0.2
0.4 0.6 0.8
1.0
V = 10V
Pulsed
GS
T = 150 C
A
°
T = -55C
A
°
T = -25C
A
°
T = 0C
A
°
T = 25C
A
°
T = 125 C
A
°
T = 85C
A
°
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
0.5
I , DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance
vs. Drain Current
D
0.1
1
V = 5V
Pulsed
GS
T = 150 C
A
°
T = -55C
A
°
T = -25C
A
°
T = 0C
A
°
T = 25C
A
°
T = 125 C
A
°
T = 85C
A
°
0.2
0.4
0.6
0.8
1.0
0.5
R
, S
T
A
T
I
C
D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE ( )
DS(on)
6
0.2
0.1
0
0.6
0.5
0.4
0.3
0.7
1.0
0.9
0.8
0
V , GATE-SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
GS
4
2
T = 25°C
A
I = 540mA
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( ) (NORMALIZED)
DS(on)
P1-P3P4-P6

DMN2004K-7

Mfr. #:
Buy DMN2004K-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V 540mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet