MSDM150-08

MSDM150
MSDM150 Rev 0 www.microsemi.com
Oct, 2011 1/3
Module Type
TYPE VRRM VRSM
MSDM150-08
MSDM150-12
MSDM150-16
MSDM150-18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ratings
Symbol Conditions Values Units
ID Three phase, full wave Tc=100 150 A
IFSM t=10mS Tvj =45 1800 A
i
2
t t=10mS Tvj =45 16200 A
2
s
Visol a.c.50HZ;r.m.s.;1min 3000 V
Tvj -40 to +150
Tstg -40 to +125
Mt To terminals(M6) 5±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module (Approximately) 220 g
Thermal Characteristics
Symbol Conditions Values Units
Rth(j-c) Per diode 0.65
/W
Rth(c-s) Module 0.03
/W
Electrical Characteristics
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID 150 Am
p
Features
Three phase bridge rectifier
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
UL E243882 approved
Applications
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
+
~
~
~
MSDM
Values
Symbol Conditions
Min. Typ. Max.
Units
VFM
T=25 IF =150A
1.28 1.40 V
IRD
Tvj=25 VRD=VRRM
Tvj=150 VRD=VRRM
0.5
6
mA
mA
MSDM150
MSDM150 Rev 0 www.microsemi.com
Oct, 2011 2/3
Performance Curves
Fig1. Forward Characteristics
Fig3. Transient thermal impedance
Fi
g
2. Power dissipation
Fig4. Max Non-Repetitive Forward Surge
Current
Fig5.Forward Current Derating Curve
0 VF 0.5 1.0 1.5 V 2.0
1 10 cycles 100
0 Tc 50 100
150
0.001 0.01 0.1 1.0 10 S 100
0 I
D 80 A 160
50HZ
300
A
200
100
I
F
0
25
- - -125
max.
typ.
3000
A
2250
1500
750
0
250
A
200
150
100
50
I
D
0
Zth(j-C)
450
W
300
150
P
vtot
0
1.0
/ W
0.5
0
MSDM150
MSDM150 Rev 0 www.microsemi.com
Oct, 2011 3/3
Package Outline Information
CASE M3-1
Dimensions in mm

MSDM150-08

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bridge Rectifiers Power Module - Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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