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IXKH24N60C5

P1-P3P4-P4
© 2008 IXYS All rights reserved
4 - 4
20080523c
IXKH 24N60C5
IXKP 24N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
-1
10
-2
t
p
[s]
Z
CJht
]W/K[
typ
98%
0
0.1
0.2
0.3
0.4
0.5
-60 -20 20 60 100 140 180
T
j
[°C]
R
)no(
SD
[
Ω
]
25 °C
150 °C
0
20
40
60
80
100
0246810
V
GS
[V]
I
D
]
A[
7V
10 V
0
0.2
0.4
0.6
0.8
1
1.2
0 1020304050
I
D
[A]
R
)no(SD
[
Ω
]
5V
5.5 V
6V
6.5 V
120V
40 0V
0
1
2
3
4
5
6
7
8
9
10
010203040
Q
gate
[nC]
V
S
G
]V[
Ciss
Coss
Crss
10
5
10
4
10
3
10
2
10
1
10
0
0 100 200 300 400 500
V
DS
[V]
C]Fp[
0
100
200
300
400
500
600
20 60 100 140 180
T
j
[°C]
E
S
A
]
J
m[
540
580
620
660
700
-60 -20 20 60 100 140 180
T
j
[°C]
V
)S
S
D(R
B
]
V
[
V
DS
=
T
JV
= 150°C
I
D
= 12 A
V
GS
= 10 V
V
DS
> 2
·
R
DS(on) max
· I
D
T
J
=
T
J
=
V
DS
= 120 V
V
GS
= 0 V
f = 1 MHz
I
D
= 7.9 A
I
D
= 0.75 mA
D
= t
p
/T
I
D
= 12 A pulsed
Fig. 5 Drain-source on-state resistanceFig. 4 Typ. drain-source on-state
resistance characteristics of IGBT
Fig. 7 Forward characteristic
of reverse diode
Fig. 8 Typ. gate charge
Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
Fig. 12 Max. transient thermal
impedance
P1-P3P4-P4

IXKH24N60C5

Mfr. #:
Buy IXKH24N60C5
Manufacturer:
Littelfuse
Description:
MOSFET 24 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
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