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NRVB1045MFST3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1 Publication Order Number:
MBR1045MFS/D
MBR1045MFS,
NRVB1045MFS
Switch Mode
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 150°C Operating Junction Temperature
• Wettable Flacks Option Available
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
Applications
• Excellent Alternative to DPAK in Space−Constrained Automotive
Applications
• Output Rectification in Compact Portable Consumer Applications
• Freewheeling Diode used with Inductive Loads
Device Package Shipping†
ORDERING INFORMATION
MBR1045MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
45 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B1045 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
B1045
AYWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR1045MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB1045MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB1045MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
MBR1045MFS, NRVB1045MFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 142°C)
I
F(AV)
10 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 140°C)
I
FRM
20 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +150 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) E
AS
150 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
− 1.7 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 10 A, T
J
= 125°C)
(i
F
= 10 A, T
J
= 25°C)
(i
F
= 20 A, T
J
= 125°C)
(i
F
= 20 A, T
J
= 25°C)
v
F
0.430
0.504
0.550
0.595
0.52
0.62
0.65
0.75
V
Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
47
0.076
170
0.500
mA
Diode Capacitance C
D
300 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MBR1045MFS, NRVB1045MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
A
= 125°C
T
A
= 25°C
T
A
= 150°C
T
A
= −40°C
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
10
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
10
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
T
A
= 125°C
T
A
= 150°C
Figure 3. Typical Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
0
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
10 20 30 40
T
A
= 25°C
T
A
= −40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
0
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
10 20 30 40 455152535
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
Figure 5. Typical Junction Characteristics
V
R
, REVERSE VOLTAGE (V)
C, JUNCTION CAPACITANCE (pF)
10000
010203040
1000
100
10
T
J
= 25°C
Figure 6. Current Derating TO−220AB
T
C
, CASE TEMPERATURE (°C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
20
0 40 80 100 140 16020 60 120
15
10
5
0
R
q
JC
= 1.7°C/W
dc
SQUARE WAVE
P1-P3P4-P5

NRVB1045MFST3G

Mfr. #:
Buy NRVB1045MFST3G
Manufacturer:
ON Semiconductor
Description:
Rectifiers 10 A, 45 V SCHOTTKY DIODE
Lifecycle:
New from this manufacturer.
Delivery:
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